Symbol
Units
V
DS
V
V
GS
V
T
A
=25C
T
A
=70C
I
DM
V
KA
V
T
A
=25C
T
A
=70C
I
FM
T
A
=25C
T
A
=70C
T
J
, T
STG
C
Symbol
Units
R
JL
R
JL
175
Maximum Junction-to-Lead
C
Steady-State
58.5
80
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t 10s
R
JA
109.4
135
C/W
Maximum Junction-to-Ambient
A
Steady-State
136.5
110
C/W
Maximum Junction-to-Ambient
A
Steady-State
117
150
Maximum Junction-to-Lead
C
Steady-State
43
80
Maximum Junction-to-Ambient
A
t 10s
R
JA
80.3
Parameter: Thermal Characteristics MOSFET
Typ
Max
W
0.7
0.59
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.15
0.92
A
1
Pulsed Forward Current
B
10
Schottky reverse voltage
20
Continuous Forward Current
A
I
F
2
A
2.6
Pulsed Drain Current
B
10
Gate-Source Voltage
12
Continuous Drain Current
A
I
D
3.3
Parameter
MOSFET
Schottky
Drain-Source Voltage
30
Absolute Maximum Ratings T
A
=25C unless otherwise noted
AO3700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 3.3A (V
GS
= 10V)
R
DS(ON)
< 65m
(V
GS
= 10V)
R
DS(ON)
< 75m
(V
GS
= 4.5V)
R
DS(ON)
< 160m
(V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO3700 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO3700 is Pb-free (meets ROHS & Sony
259 specifications). AO3700L is a Green Product ordering
option. AO3700 and AO3700L are electrically identical.
A
K
G
D
S
SOT-23-5
Top View
1
2
3
5
4
G
S
A
D
K
Alpha & Omega Semiconductor, Ltd.
AO3700
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.4
2
V
I
D(ON)
10
A
51
65
T
J
=125C
64
90
60
75
m
100
160
m
g
FS
11.7
S
V
SD
0.81
1
V
I
S
2.5
A
C
iss
226
270
pF
C
oss
39
pF
C
rss
29
pF
R
g
1.4
2.5
Q
g
4.6
5.5
nC
Q
gs
1.4
nC
Q
gd
0.55
nC
t
D(on)
2.6
ns
t
r
3.2
ns
t
D(off)
14.5
ns
t
f
2.1
ns
t
rr
10.2
13
ns
Q
rr
3.8
nC
SCHOTTKY PARAMETERS
V
F
0.39
0.5
V
0.1
20
C
T
34
pF
t
rr
5.2
10
ns
Q
rr
0.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
mA
V
R
=16V, T
J
=125C
Junction Capacitance
V
R
=10V
Forward Voltage Drop
I
F
=0.5A
I
rm
Maximum reverse leakage current
V
R
=16V
Body Diode Reverse Recovery Time
I
F
=3.3A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=3.3A, dI/dt=100A/
s
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=4.7
,
R
GEN
=6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=15V, I
D
=3.3A
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
V
DS
=5V, I
D
=3.3A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=3.3A
m
V
GS
=4.5V, I
D
=3.0A
V
GS
=2.5V, I
D
=1A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=12V
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Schottky Reverse Recovery Time
I
F
=1A, dI/dt=100A/
s
Schottky Reverse Recovery Charge
I
F
=1A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating. Rev0: October 2005
Alpha & Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
51
60
100
270
1.7
3.6
13
0
3
6
9
12
15
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=2.5V
3V
3.5V
4V
10V
6V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
0
25
50
75
100
125
150
175
200
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
40
50
60
70
80
90
100
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=3.3A
25C
125
I
D
=3.3A
I
D
=1A
I
D
=3.0A
Alpha & Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
51
60
100
270
1.7
3.6
13
0
1
2
3
4
5
0
1
2
3
4
5
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
50
100
150
200
250
300
350
400
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=3.3A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=110C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
I
F
(A
m
p
s)
0
20
40
60
80
100
0
5
10
15
20
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
0
25
50
75
100
125
150
Temperature (C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
L
eakag
e C
u
r
r
e
n
t
(A
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
150
Temperature (C)
V
F
(V
ol
ts)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=135C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
f = 1MHz
I
F
=0.5A
25C
V
R
=16V
125C
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
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