Symbol
Units
V
DS
V
V
GS
V
T
A
=25C
T
A
=70C
I
DM
V
KA
V
T
A
=25C
T
A
=70C
I
FM
T
A
=25C
T
A
=70C
T
J
, T
STG
C
Symbol
Units
R
JL
R
JL
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
MOSFET
Schottky
Drain-Source Voltage
-20
Gate-Source Voltage
12
Continuous Drain Current
A
I
D
-3
A
-2.3
Pulsed Drain Current
B
-10
Schottky reverse voltage
20
Continuous Forward Current
A
I
F
2
A
1
Pulsed Forward Current
B
10
W
0.72
0.59
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.14
0.92
Parameter: Thermal Characteristics MOSFET
Typ
Max
Maximum Junction-to-Ambient
A
t 10s
R
JA
80.3
110
C/W
Maximum Junction-to-Ambient
A
Steady-State
117
150
Maximum Junction-to-Lead
C
Steady-State
43
80
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t 10s
R
JA
109.4
135
C/W
Maximum Junction-to-Ambient
A
Steady-State
136.5
175
Maximum Junction-to-Lead
C
Steady-State
58.5
80
AO3701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -20V
I
D
= -3A (V
GS
= -10V)
R
DS(ON)
< 80m
(V
GS
= -10V)
R
DS(ON)
< 100m
(V
GS
= -4.5V)
R
DS(ON)
< 145m
(V
GS
= -2.5V)
ESD Rating: 2000V HBM
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO3701 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications. It is
ESD protected.
Standard Product AO3701 is Pb-free (meets
ROHS & Sony 259 specifications). AO3701L is a Green
Product ordering option. AO3701 and AO3701L are
electrically identical.
SOT-23-5
Top View
1
2
3
5
4
G
S
A
D
K
A
K
D
S
G
Alpha & Omega Semiconductor, Ltd.
AO3701
Symbol
Min
Typ
Max
Units
BV
DSS
-20
V
-0.5
T
J
=55C
-5
1
A
10
A
V
GS(th)
-0.6
-0.9
-1.4
V
I
D(ON)
-10
A
65
80
T
J
=125C
91
110
82
100
m
117
145
m
g
FS
6.8
S
V
SD
-0.65
-0.8
-0.95
V
I
S
-2
A
C
iss
512
620
pF
C
oss
77
pF
C
rss
62
pF
R
g
9.2
13
Q
g
5.5
6.6
nC
Q
gs
0.8
nC
Q
gd
1.9
nC
t
D(on)
5
ns
t
r
6.7
ns
t
D(off)
28
ns
t
f
13.5
ns
t
rr
9.8
12
ns
Q
rr
2.7
nC
SCHOTTKY PARAMETERS
V
F
0.39
0.45
V
0.1
20
C
T
34
pF
t
rr
5.2
10
ns
Q
rr
0.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Schottky Reverse Recovery Time
I
F
=1A, dI/dt=100A/
s
Schottky Reverse Recovery Charge
I
F
=1A, dI/dt=100A/
s
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-16V, V
GS
=0V
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
V
DS
=0V, V
GS
=10V
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
On state drain current
V
GS
=-4.5V, V
DS
=-5V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-3A
m
V
GS
=-4.5V, I
D
=-2A
V
GS
=-2.5V, I
D
=-1A
Forward Transconductance
V
DS
=-5V, I
D
=-3A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=-10V, V
DS
=-10V, R
L
=2.8
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Junction Capacitance
V
R
=10V
Forward Voltage Drop
I
F
=0.5A
Maximum reverse leakage current
V
R
=16V
I
GSS
Gate-Body leakage current
V
DS
=0V, V
GS
=12V
mA
V
R
=16V, T
J
=125C
I
rm
Body Diode Reverse Recovery Time
I
F
=-3A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=-3A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev1: May 2006
Alpha & Omega Semiconductor, Ltd.
AO3701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
-2.0V
-2.5V
-4.0V
-5.0V
-3.0V
-6.0V
-10.0V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
3.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
20
40
60
80
100
120
140
160
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
Norm
a
lize
d O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
=-2A, V
GS
=-4.5V
I
D
=-1A, V
GS
=-2.5V
I
D
=-3A, V
GS
=-10V
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=-3A
25C
125C
25C
125C
V
DS
=-5V
V
GS
=-2.5V
V
GS
=-4.5V
V
GS
=-10V
Alpha & Omega Semiconductor, Ltd.
AO3701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
1
2
3
4
5
6
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Vo
l
ts)
I
D
=-3A
0
200
400
600
800
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
aci
tan
ce (p
F
)
C
iss
C
oss
C
rss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
wer
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
Norm
a
lize
d Tra
n
s
i
e
n
t
T
h
e
r
m
al
R
esi
stan
ce
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=110C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
mp
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
T
J(Max)
=150C
T
A
=25C
10
s
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
AO3701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
I
F
(A
m
p
s)
0
20
40
60
80
100
0
5
10
15
20
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
0
25
50
75
100
125
150
Temperature (C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
L
eakag
e C
u
r
r
e
n
t
(A
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
150
Temperature (C)
V
F
(V
ol
ts)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=135C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
f = 1MHz
I
F
=0.5A
25C
V
R
=16V
125C
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
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