Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
26
40
50
75
R
JL
14
24
Junction and Storage Temperature Range
A
P
D
C
3.1
2
-55 to 150
T
A
=70C
I
D
-15
-12.8
-80
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Gate-Source Voltage
Drain-Source Voltage
-30
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO4429
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -15 A (V
GS
= -10V)
Max R
DS(ON)
< 7.7m
(V
GS
= -10V)
Max R
DS(ON)
< 12m
(V
GS
= -4.5V)
ESD Rating: 4KV HBM
General Description
The AO4429 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch. The device is ESD protected.
Standard
Product AO4429 is Pb-free (meets ROHS & Sony
259 specifications). AO4429L is a Green Product
ordering option. AO4429 and AO4429L are
electrically identical.
SOIC-8
Top View
G
S
S
S
D
D
D
D
D
S
G
Alpha & Omega Semiconductor, Ltd.
AO4429
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-10
I
GSS
1
A
V
GS(th)
-1.4
-1.8
-2.7
V
I
D(ON)
-80
A
6.4
7.7
T
J
=125C
8.1
9
12
m
g
FS
50
S
V
SD
-0.71
-1
V
I
S
-5
A
C
iss
5355
6400
pF
C
oss
970
pF
C
rss
620
pF
R
g
2.8
4
Q
g
91
120
nC
Q
g
(4.5V)
46
60
nC
Q
gs
16
nC
Q
gd
21
nC
t
D(on)
15
ns
t
r
15
ns
t
D(off)
82.5
ns
t
f
34
ns
t
rr
38
50
ns
Q
rr
38
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-15A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-15A
Reverse Transfer Capacitance
I
F
=-15A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-4.5V, I
D
=-10A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-15A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-15A
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
Gate Charge
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AO4429
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-3V
-3.5V
-4V
-10V
-4.5V
0
10
20
30
40
50
60
1
1.5
2
2.5
3
3.5
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
2
4
6
8
10
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=-10V
V
GS
=-4.5V
0
4
8
12
16
20
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-15A
25C
125C
I
D
=-15A
V
GS
=0V
Alpha & Omega Semiconductor, Ltd.
AO4429
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
20
40
60
80
100
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts)
0
1000
2000
3000
4000
5000
6000
7000
8000
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-15A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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