Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
28
40
54
75
R
JL
21
30
Junction and Storage Temperature Range
A
P
D
C
3
2.1
-55 to 150
T
A
=70C
I
D
-11
-9.7
-50
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
25
Gate-Source Voltage
Drain-Source Voltage
-30
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO4433
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -11 A (V
GS
= -20V)
R
DS(ON)
< 14m
(V
GS
= -20V)
R
DS(ON)
< 18m
(V
GS
= -10V)
ESD Rating: 1.5KV HBM
General Description
The AO4433 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected.
Standard product AO4433
is Pb-free (meets ROHS & Sony 259 specifications).
AO4433L is a Green Product ordering option.
AO4433 and AO4433L are electrically identical.
SOIC-8
Top View
G
S
S
S
D
D
D
D
D
S
G
Alpha & Omega Semiconductor, Ltd.
AO4433
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
1
A
V
GS(th)
-2
-2.8
-4
V
I
D(ON)
-50
A
11
14
T
J
=125C
15
19
13.8
18
m
38.5
m
g
FS
20
S
V
SD
-0.72
-1
V
I
S
-4.2
A
C
iss
1760
2200
pF
C
oss
360
pF
C
rss
255
pF
R
g
6.4
8
Q
g
30
38
nC
Q
gs
7
nC
Q
gd
8
nC
t
D(on)
11.5
ns
t
r
8
ns
t
D(off)
35
ns
t
f
18.5
ns
t
rr
24
30
ns
Q
rr
16
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-11A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-20V, I
D
=-11A
Reverse Transfer Capacitance
I
F
=-11A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-10V, I
D
=-10A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-11A
V
GS
=-4.5V, I
D
=-4A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1.5
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-11A
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AO4433
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-4V
-4.5V
-5V
-10V
-6V
0
5
10
15
20
25
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
10
11
12
13
14
15
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
V
GS
=-20V
I
D
=-11A
V
GS
=-10V
I
D
=-10A
0
10
20
30
40
50
0
5
10
15
20
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-10V
V
GS
=-20V
I
D
=-11A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4433
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
30
35
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts)
0
500
1000
1500
2000
2500
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-11A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10s
Alpha & Omega Semiconductor, Ltd.
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