Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
24
40
54
75
R
JL
21
30
Junction and Storage Temperature Range
A
P
D
C
3.1
2
-55 to 150
T
A
=70C
I
D
-6.5
-5
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Gate-Source Voltage
Drain-Source Voltage
-40
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO4443
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -40V
I
D
= -6.5 A (V
GS
= -10V)
R
DS(ON)
< 42m
(V
GS
= -10V)
R
DS(ON)
< 63m
(V
GS
= -4.5V)
General Description
The AO4443 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications.
Standard Product
AO4443 is Pb-free (meets ROHS & Sony 259
specifications). AO4443L is a Green Product
ordering option. AO4443 and AO4443L are
electrically identical.
SOIC-8
Top View
G
D
S
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd.
AO4443
Symbol
Min
Typ
Max
Units
BV
DSS
-40
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1
-1.9
-3
V
I
D(ON)
-20
A
33.3
42
T
J
=125C
54
68
48
63
m
g
FS
14
S
V
SD
-0.75
-1
V
I
S
-6
A
C
iss
657
pF
C
oss
143
pF
C
rss
63
pF
R
g
6.5
Q
g
(10V)
14.2
nC
Q
g
(4.5V)
7.1
nC
Q
gs
2.2
nC
Q
gd
4.1
nC
t
D(on)
7.7
ns
t
r
8
ns
t
D(off)
26.5
ns
t
f
11.5
ns
t
rr
21.9
ns
Q
rr
14.9
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
=-6A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=-6A, dI/dt=100A/
s
Turn-On DelayTime
V
GS
=-10V, V
DS
=-20V, R
L
=3.7
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-20V, I
D
=-6A
Reverse Transfer Capacitance
Gate resistance
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=-20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Output Capacitance
V
DS
=-5V, I
D
=-6A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=-10V, I
D
=-6A
m
V
GS
=-4.5V, I
D
=-5A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
On state drain current
V
GS
=-10V, V
DS
=-5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-32V, V
GS
=0V
P-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 1 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4443
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A)
V
GS
=-3.0V
-3.5V
-4.5V
-10V
-4.0V
-5.0V
-6.0V
0
5
10
15
20
25
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
20
25
30
35
40
45
50
55
60
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
V
GS
=-10V
I
D
=-6A
V
GS
=-4.5V
I
D
=-5A
20
40
60
80
100
120
140
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-6A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4443
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
0
2
4
6
8
10
0
3
6
9
12
15
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
o
l
ts)
0
200
400
600
800
1000
0
10
20
30
40
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C, T
A
=25C
V
DS
=-40V
I
D
=-6A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
PDF 
ZIP