Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
31
40
59
75
R
JL
16
24
W
Junction and Storage Temperature Range
A
P
D
C
3
2.1
-55 to 150
T
A
=70C
I
D
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
30
Maximum Junction-to-Ambient
A
Steady-State
20
17
80
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Pulsed Drain Current
B
Power Dissipation
T
A
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
AO4444
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 20A (V
GS
= 10V)
R
DS(ON)
< 5.5m
(V
GS
= 10V)
R
DS(ON)
< 7.5m
(V
GS
= 4.5V)
General Description
The AO4444 uses advanced trench technology to
provide excellent R
DS(ON)
, body diode characteristics
and ultra-low gate resistance. This device is ideally
suited for use as a low side switch in 12V buck
converters.
Standard Product AO4444 is Pb-free
(meets ROHS & Sony 259 specifications). AO4444L
is a Green Product ordering option. AO4444 and
AO4444L are electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO4444
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.8
3
V
I
D(ON)
60
A
3.9
5.5
T
J
=125C
5.1
6.2
5.1
7.5
m
g
FS
106
S
V
SD
0.72
1
V
I
S
4
A
C
iss
3200
3840
pF
C
oss
590
pF
C
rss
414
pF
R
g
0.54
0.7
Q
g
(10V)
63
76
nC
Q
g
(4.5V)
33
40
nC
Q
gs
8.6
nC
Q
gd
17.6
nC
t
D(on)
12
ns
t
r
15.5
ns
t
D(off)
40
ns
t
f
14
ns
t
rr
34
41
ns
Q
rr
30
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/
s
Gate Source Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=20A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Gate Drain Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
V
GS
=4.5V, I
D
=15A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
V
GS
=10V, V
DS
=15V, R
L
=0.75
,
R
GEN
=3
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
Rev 1 : June 2005
Alpha & Omega Semiconductor, Ltd.
AO4444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
10V
4.0V
0
10
20
30
40
50
60
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
2
3
4
5
6
7
8
0
10
20
30
40
50
60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
rmal
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=10V
V
GS
=4.5V
3
4.5
6
7.5
9
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25C
125C
I
D
=20A
Alpha & Omega Semiconductor, Ltd.
AO4444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
10
20
30
40
50
60
70
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Vo
l
ts
)
0
1000
2000
3000
4000
5000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
t
an
ce (
p
F
)
C
iss
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Po
w
e
r
(W
)
C
oss
C
rss
V
DS
=15V
I
D
=20A
T
J(Max)
=150C
T
A
=25C
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
rmal
i
z
ed
T
ran
si
en
t
T
h
ermal
Resi
st
an
ce
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
Single Pulse
10
s
Alpha & Omega Semiconductor, Ltd.
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