Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
31
40
59
75
R
JL
16
24
C
-55 to 150
A
16
3.1
W
2.0
Maximum
Units
Parameter
Maximum Junction-to-Ambient
A
Steady-State
Power Dissipation
T
A
=25C
P
DSM
Junction and Storage Temperature Range
T
A
=70C
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Gate-Source Voltage
Drain-Source Voltage
30
I
DSM
20
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Pulsed Drain Current
B
120
T
A
=70C
Continuous Drain
Current
A
T
A
=25C
AO4456
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
=20A (V
GS
= 10V)
R
DS(ON)
< 4.6m
(V
GS
= 10V)
R
DS(ON)
< 5.6m
(V
GS
= 4.5V)
General Description
The AO4456 uses advanced trench technology with a
monolithically integrated Schottky diode to provide
excellent R
DS(ON)
,and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. S
tandard
Product AO4456 is Pb-free (meets ROHS & Sony
259 specifications). AO4456 is a Green Product
ordering option. AO4456 and AO4456 are electrically
identical.
D
S
G
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd.
AO4456
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
V
DS
=24V, V
GS
=0V
0.008
0.1
T
J
=125C
9
20
I
GSS
0.1
A
V
GS(th)
Gate Threshold Voltage
1.4
1.8
2.4
V
I
D(ON)
120
A
3.8
4.6
T
J
=125C
5.9
7.4
4.5
5.6
m
g
FS
112
S
V
SD
0.37
0.5
V
I
S
5
A
C
iss
6430
7716
pF
C
oss
756
pF
C
rss
352
pF
R
g
0.9
1.4
Q
g
(10V)
96
115
Q
g
(4.5V)
44
53
nC
Q
gs
17
nC
Q
gd
13
nC
t
D(on)
17.5
ns
t
r
10
ns
t
D(off)
56
ns
t
f
10.5
ns
t
rr
20
25
ns
Q
rr
26
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
m
V
GS
=4.5V, I
D
=20A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Maximum Body-Diode
+ Schottky
Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
DS
=V
GS
I
D
=250
A
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
Zero Gate Voltage Drain Current
mA
V
DS
=0V, V
GS
= 12V
Gate-Body leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=300A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=1mA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=300A/
s
A: The value of R
JA
is measured with the device in a still air environment with T
A
=25C. The power dissipation P
DSM
and current rating I
DSM
are
based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C.
C. The R JA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
Rev
1: June 2006
Alpha & Omega Semiconductor, Ltd.
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
30
60
90
120
150
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
10V
4.5V
V
GS
=3.5V
6V
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
2
3
4
5
6
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
30
60
90
120
150
180
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
I
D
=20A
V
GS
=10V
V
GS
=4.5V
2
4
6
8
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
0
20
40
60
80
100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
2000
4000
6000
8000
10000
12000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
C
oss
C
rss
0.0
0.1
1.0
10.0
100.0
1000.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
s
10ms
1ms
0.1s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
100
V
DS
=15V
I
D
=20A
0
10
20
30
40
50
60
70
80
90
100
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
T
J(Max)
=150C
T
A
=25C
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Alpha & Omega Semiconductor, Ltd.
AO4456
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
50
100
150
200
Temperature (C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
I
R
(A)
VDS=12V
VDS=24V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
50
100
150
200
Temperature (C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
V
SD
(V
)
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Q
rr
(n
C)
4
5
6
7
8
Ir
m (
A
)
di/dt=800A/us
0
5
10
15
20
25
0
5
10
15
20
25
30
Is (A)
Figure 15: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
t
rr (
n
s
)
0
0.5
1
1.5
2
2.5
3
S
I
S
=1A
10A
20A
0
10
20
30
40
50
60
0
200
400
600
800
1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q
rr
(n
C)
0
1
2
3
4
5
6
7
8
Ir
m (
A
)
0
5
10
15
20
25
30
35
0
200
400
600
800
1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
t
rr (
n
s
)
0
1
2
3
S
di/dt=800A/us
125C
125C
125C
125C
125C
125C
125C
125C
25C
25C
25C
25C
25C
25C
25C
25C
Is=20A
Is=20A
Qrr
Irm
trr
Qrr
Irm
trr
S
S
5A
Alpha & Omega Semiconductor, Ltd.
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