Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Device
Typ
Max Units
n-ch
48
62.5 C/W
n-ch
74
110
C/W
R
JL
n-ch
35
50
C/W
p-ch
48
62.5 C/W
p-ch
74
110
C/W
R
JL
p-ch
35
50
C/W
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
-20
T
A
=70C
Power Dissipation
T
A
=25C
P
D
Steady-State
Junction and Storage Temperature Range
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
W
6
5
20
2
1.28
-4
-5
2
1.28
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
40
-40
20
Drain-Source Voltage
20
Gate-Source Voltage
Thermal Characteristics: n-channel and p-channel
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
AO4621
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 40V -40V
I
D
= 6A (V
GS
=10V) -5A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 31m
(V
GS
=10V) < 45m
(V
GS
= -10V)
< 45m
(V
GS
=4.5V) < 63m
(V
GS
= -4.5V)
General Description
The AO4621 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.
Standard Product AO4621
is Pb-free (meets ROHS & Sony 259
specifications). AO4621L is a Green
Product ordering option. AO4621 and
AO4621L are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
AO4621
Symbol
Min
Typ
Max
Units
BV
DSS
40
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
2.3
3
V
I
D(ON)
20
A
23.2
31
T
J
=125C
36
48
32.6
45
m
g
FS
22
S
V
SD
0.77
1
V
I
S
2
A
C
iss
404
pF
C
oss
95
pF
C
rss
37
pF
R
g
2.7
Q
g
(10V)
8.3
nC
Q
g
(4.5V)
4.2
nC
Q
gs
1.3
nC
Q
gd
2.3
nC
t
D(on)
4.2
ns
t
r
3.3
ns
t
D(off)
15.6
ns
t
f
3
ns
t
rr
20.5
ns
Q
rr
14.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge
Total Gate Charge
I
F
=6A, dI/dt=100A/
s
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=6A, dI/dt=100A/
s
Input Capacitance
N Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=10mA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=32V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
= 20V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=10V, V
DS
=5V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
V
GS
=4.5V, I
D
=5A
V
DS
=5V, I
D
=6A
I
S
=1A,V
GS
=0V
V
GS
=10V, I
D
=6A
Diode Forward Voltage
V
GS
=10V, V
DS
=20V, R
L
=3.3
,
R
GEN
=3
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
V
GS
=10V, V
DS
=20V, I
D
=6A
V
GS
=0V, V
DS
=20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
Rev 0 : June 2006
Alpha & Omega Semiconductor, Ltd.
AO4621
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
(A)
V
GS
=3.5V
4V
10V
5V
4.5V
0
5
10
15
20
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
20
30
40
50
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
V
GS
=10V
I
D
=6A
V
GS
=4.5V
I
D
=5A
10
20
30
40
50
60
70
80
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=6A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4621
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
200
400
600
800
0
10
20
30
40
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
T
J(Max)
=150C
T
A
=25C
R
DS(ON)
limited
V
DS
=20V
I
D
= 6A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AO4621
Symbol
Min
Typ
Max
Units
BV
DSS
-40
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1
-1.9
-3
V
I
D(ON)
-20
A
32.5
45
T
J
=125C
52
65
51.4
63
m
g
FS
12
S
V
SD
-0.75
-1
V
I
S
-2.6
A
C
iss
657
pF
C
oss
143
pF
C
rss
63
pF
R
g
6.5
Q
g
(10V)
13.6
nC
Q
g
(4.5V)
6.8
nC
Q
gs
1.8
nC
Q
gd
3.9
nC
t
D(on)
7.5
ns
t
r
6.7
ns
t
D(off)
26
ns
t
f
11.2
ns
t
rr
22.3
ns
Q
rr
15.2
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
=-5A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/
s
Turn-On DelayTime
V
GS
=-10V, V
DS
=-20V, R
L
=4
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-20V, I
D
=-5A
Reverse Transfer Capacitance
Gate resistance
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=-20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Output Capacitance
V
DS
=-5V, I
D
=-4.8A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=-10V, I
D
=-5A
m
V
GS
=-4.5V, I
D
=-2A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
On state drain current
V
GS
=-10V, V
DS
=-5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
Drain-Source Breakdown Voltage
I
D
=-10mA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-32V, V
GS
=0V
P-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 0 : June 2006
Alpha & Omega Semiconductor, Ltd.
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