Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Device
Typ
Max Units
n-ch
48
62.5 C/W
n-ch
74
110 C/W
R
JL
n-ch
35
40
C/W
p-ch
48
62.5 C/W
p-ch
74
110 C/W
R
JL
p-ch
35
40
C/W
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
-20
T
A
=70C
Power Dissipation
T
A
=25C
P
D
Steady-State
Junction and Storage Temperature Range
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
W
6.9
5.8
30
2
1.44
-4.6
-5.4
2
1.44
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
30
-30
20
Drain-Source Voltage
20
Gate-Source Voltage
Thermal Characteristics: n-channel and p-channel
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
AO4625
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 6.9A (V
GS
=10V) -5.4A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 28m
(V
GS
=10V) < 45m
(V
GS
= -10V)
< 42m
(V
GS
=4.5V) < 75m
(V
GS
= -4.5V)
General Description
The AO4625 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
power inverters, and other
applications.
Standard Product AO4625 is Pb-
free (meets ROHS & Sony 259
specifications). AO4625L is a Green Product
ordering option. AO4625 and AO4625L are
electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
AO4625
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
0.004
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.86
3
V
I
D(ON)
30
A
22.5
28
T
J
=125C
31.3
38
34.5
42
m
g
FS
10
15.4
S
V
SD
0.76
1
V
I
S
3
A
C
iss
680
820
pF
C
oss
102
pF
C
rss
77
pF
R
g
3
4.5
Q
g
(10V)
13.84
17
nC
Q
g
(4.5V)
6.74
8.1
nC
Q
gs
1.82
nC
Q
gd
3.2
nC
t
D(on)
4.6
ns
t
r
4.1
ns
t
D(off)
20.6
ns
t
f
5.2
ns
t
rr
16.5
20
ns
Q
rr
7.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
I
F
=6.9A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=6.9A, dI/dt=100A/
s
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=2.2
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=6.9A
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
V
DS
=5V, I
D
=6.9A
Diode Forward Voltage
I
S
=1A
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6.9A
m
V
GS
=4.5V, I
D
=5.0A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
N-CHANNEL: Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 0: Apr. 2006
Alpha & Omega Semiconductor, Ltd.
AO4625
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
10
20
30
40
50
60
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body diode characteristics
I
S
Amps
125C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
0
50
100
150
200
Temperature ( C)
Figure 4: On-Resistance vs. Junction Temperature
No
rm
aliz
ed
O
n
-
R
esist
an
ce
V
GS
=10V
V
GS
=4.5
10
20
30
40
50
60
70
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=6.9A
125C
25C
25C
I
D
=6.9A
5V
6V
Alpha & Omega Semiconductor, Ltd.
AO4625
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge characteristics
V
GS
(V
ol
ts
)
0
100
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
acit
a
n
ce (
p
F
)
C
iss
0
10
20
30
40
1E-04 0.001 0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r W
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
rm
aliz
ed
T
r
an
sien
t
T
h
e
rm
al Resist
an
ce
C
oss
C
rss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
I
D
(Amps
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=6.9A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
10
s
Alpha & Omega Semiconductor, Ltd.
AO4625
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1
-1.98
-3
V
I
D(ON)
-20
A
35
45
T
J
=125C
49
64
58
75
m
g
FS
6
8.6
S
V
SD
-0.78
-1
V
I
S
-2.8
A
C
iss
700
900
pF
C
oss
120
pF
C
rss
75
pF
R
g
10
15
Q
g
(10V)
14.7
19
nC
Q
g
(4.5V)
7.6
10
nC
Q
gs
2
nC
Q
gd
3.8
nC
t
D(on)
8.3
ns
t
r
5
ns
t
D(off)
29
ns
t
f
14
ns
t
rr
23.5
30
ns
Q
rr
13.4
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
I
F
=-5.4A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=-5.4A, dI/dt=100A/
s
Turn-On DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=2.8
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-5.4A
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
V
DS
=-5V, I
D
=-5.4A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-5.4A
m
V
GS
=-4.5V, I
D
=-4A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
On state drain current
V
GS
=-4.5V, V
DS
=-5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V
P-CHANNEL: Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
Rev 0: Apr. 2006
Alpha & Omega Semiconductor, Ltd.
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