Symbol
Units
V
DS
V
V
GS
V
T
A
=25C
T
A
=70C
I
DM
V
KA
V
T
A
=25C
T
A
=70C
I
FM
T
A
=25C
T
A
=70C
T
J
, T
STG
C
W
2
2
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
3
3
A
3.2
Pulsed Diode Forward Current
B
30
Schottky reverse voltage
30
Continuous Forward Current
A
I
F
4.4
A
9.3
Pulsed Drain Current
B
50
Continuous Drain Current
A
I
D
11
Gate-Source Voltage
20
Drain-Source Voltage
30
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
MOSFET
Schottky
AO4702
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 11A (V
GS
= 10V)
R
DS(ON)
< 16m
(V
GS
= 10V)
R
DS(ON)
< 25m
(V
GS
= 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
General Description
The AO4702 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky Diode is
packaged in parallel to improve device performance in
synchronous recitification applications, or H-bridge
configurations.
Standard Product AO4702 is Pb-free
(meets ROHS & Sony 259 specifications). AO4702L is a
Green Product ordering option. AO4702and AO4702L are
electrically identical.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
A
K
Alpha & Omega Semiconductor, Ltd.
AO4702
Symbol
Typ
Max
31
40
59
75
R
JL
16
24
Symbol
Typ
Max
36
40
67
75
R
JL
25
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
C/W
Maximum Junction-to-Ambient
A
Steady-State
Thermal Characteristics: Schottky
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics: MOSFET
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop,
capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 5 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4702
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
0.007
0.05
3.2
10
12
20
I
GSS
100
nA
V
GS(th)
1
1.8
3
V
I
D(ON)
40
A
13.4
16
T
J
=125C
16.8
21
20
25
m
g
FS
25
S
V
SD
0.45
0.5
V
I
S
5
A
C
iss
1040
1250
pF
C
oss
212
pF
C
rss
121
pF
R
g
0.7
0.85
Q
g
(10V)
19.8
24
nC
Q
g
(4.5V)
9.8
12
nC
Q
gs
2.5
nC
Q
gd
3.5
nC
t
D(on)
4.5
7
ns
t
r
3.9
7
ns
t
D(off)
17.4
30
ns
t
f
3.2
5.7
ns
t
rr
19
23
ns
Q
rr
9
11
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Output Capacitance (FET+Schottky)
Body Diode + Schottky Reverse Recovery Charge I
F
=11A, dI/dt=100A/
s
On state drain current
V
GS
=4.5V, V
DS
=5V
I
F
=11A, dI/dt=100A/
s
Total Gate Charge
Gate Source Charge
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
I
DSS
mA
Gate Threshold Voltage
Body Diode + Schottky Reverse Recovery Time
V
GS
=0V, V
DS
=0V, f=1MHz
V
R
=30V, T
J
=125C
V
R
=30V, T
J
=150C
V
DS
=V
GS
I
D
=250
A
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(Set by Schottky leakage)
Gate-Body leakage current
I
D
=250
A, V
GS
=0V
V
R
=30V
V
DS
=0V, V
GS
= 20V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode + Schottky Forward Voltage
m
V
GS
=4.5V, I
D
=8A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=11A
V
GS
=10V, I
D
=11A
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=10V, V
DS
=15V, I
D
=11A
Total Gate Charge
Gate Drain Charge
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
V
GS
=10V, V
DS
=15V, R
L
=1.35
,
R
GEN
=3
Turn-Off Fall Time
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in any
given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 5: Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
10
12
14
16
18
20
22
24
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(m
)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
Norm
al
i
z
ed On-Resi
stance
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=11A
25C
125C
I
D
=11A
Alpha & Omega Semiconductor, Ltd.
AO4702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capaci
tance (pF)
C
iss
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
Norm
al
i
z
ed Transi
ent
Therm
al
Resi
stance
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=11A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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