Symbol
Units
V
DS
V
V
GS
V
T
A
=25C
T
A
=70C
I
DM
V
KA
V
T
A
=25C
T
A
=70C
I
FM
T
A
=25C
T
A
=70C
T
J
, T
STG
C
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
3.1
3.1
I
F
4.4
W
2
2
Schottky reverse voltage
30
A
3.2
Pulsed Diode Forward Current
B
30
Continuous Forward Current
A
A
10.4
Pulsed Drain Current
B
40
Gate-Source Voltage
13
Continuous Drain Current
A
I
D
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
MOSFET
Schottky
Drain-Source Voltage
30
12
AO4704
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 13 A (V
GS
= 10V)
R
DS(ON)
< 11.5m (V
GS
= 10V)
R
DS(ON)
< 13m (V
GS
= 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
General Description
The AO4704 uses advanced trench technology to
provide excellent R
DS(ON)
,
shoot-through immunity and
body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
The co-packaged Schottky Diode boosts efficiency
further.
AO4704 is Pb-free (meets ROHS & Sony
259 specifications). AO4704L is a Green Product
ordering option. AO4704 and AO4704L are
electrically identical.
G
D
S
A
K
G
S/A
S/A
S/A
D/K
D/K
D/K
D/K
1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.
AO4704
Symbol
Typ
Max
28
40
54
75
R
JL
21
30
Symbol
Typ
Max
36
40
67
75
R
JL
25
30
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
C/W
Maximum Junction-to-Ambient
A
Steady-State
Thermal Characteristics: Schottky
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop,
capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
Rev5: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS
OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4704
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
0.007
0.05
3.2
10
12
20
I
GSS
100
nA
V
GS(th)
0.6
1.1
2
V
I
D(ON)
40
A
9.1
11.5
T
J
=125C
13.3
16.5
10.5
13
m
g
FS
30
37
S
V
SD
0.45
0.5
V
I
S
5
A
DYNAMIC PARAMETERS
C
iss
3656
4050
pF
C
oss
322
pF
C
rss
168
pF
R
g
0.86
1.1
SWITCHING PARAMETERS
Q
g
(4.5V)
30.5
36
nC
Q
gs
4.6
nC
Q
gd
8.6
nC
t
D(on)
6.2
9
ns
t
r
4.8
7
ns
t
D(off)
55
75
ns
t
f
7.3
11
ns
t
rr
20.3
25
ns
Q
rr
8.4
12.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate resistance
Gate Drain Charge
Body Diode+Schottky Reverse Recovery Charge
I
F
=13A, dI/dt=100A/
s
Body Diode+Schottky Reverse Recovery Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.1
,
R
GEN
=0
Turn-Off Fall Time
Total Gate Charge
Gate Source Charge
I
F
=13A, dI/dt=100A/
s
On state drain current
Forward Transconductance
Diode + Schottky Forward Voltage
I
S
=1A,V
GS
=0V
V
GS
=4.5V, V
DS
=5V
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, I
D
=13A
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
mA
Gate Threshold Voltage
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
Gate-Body leakage current
V
DS
=V
GS
I
D
=250
A
V
R
=30V
V
DS
=0V, V
GS
= 12V
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=4.5V, I
D
=12.2A
V
GS
=10V, ID=13A
V
R
=30V, T
J
=125C
V
R
=30V, T
J
=150C
Reverse Transfer Capacitance
V
DS
=5V, I
D
=13A
Output Capacitance (FET+Schottky)
Maximum Body-Diode + Schottky Continuous Current
V
GS
=0V, V
DS
=15V, f=1MHz
Input Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in any
given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve provides
a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately
Rev5: August 2005
.
Alpha & Omega Semiconductor, Ltd.
AO4704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
I
D
(A
)
V
GS
=2.0V
V
GS
=2.5V
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
25C
125C
V
GS
=5V
7
8
9
10
11
12
13
0
5
10
15
20
25
30
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(
O
N)
(m
)
V
GS
=10V
V
GS
=4.5V
0.8
1.0
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
m
aliz
e O
N
-
R
esist
an
ce
V
GS
=4.5V
I
D
=13A
V
GS
=10V
0
5
10
15
20
25
30
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
I
D
=13A
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note F)
I
S
(A
)
25C
125C
FET+SCHOTTKY
Alpha & Omega Semiconductor, Ltd.
AO4704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
t
s)
V
DS
=15V
I
D
=13A
100
1000
10000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
ap
acit
an
ce (
p
F
)
C
iss
C
rss
C
oss
FET+SCHOTTKY
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
I
D
(A
)
T
J(Max)
=150C
T
A
=25C
R
DS(ON)
limited
10s
10ms
1ms
0.1s
1s
10s
DC
100s
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Z
JA
N
o
r
m
aliz
ed
T
r
an
sien
t
T
h
e
r
m
al R
esist
an
ce
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
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