Document Outline
- ao4916A_Q1__rohscover.pdf
A
Absolute Maximum Ratings T =25C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Units
Drain-Source Voltage
V
DS
30
30
V
Gate-Source Voltage
V
GS
20
20
V
Continuous Drain
Current
A
T
A
=25C
I
D
8.5
8.5
A
T
A
=70C
6.6
6.6
Pulsed Drain Current
B
I
DM
30
30
Power Dissipation
T
A
=25C
P
D
2
2
W
T
A
=70C
1.28
1.28
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
-55 to 150
C
Parameter
Symbol
Maximum Schottky
Units
Reverse Voltage
V
DS
30
V
Continuous Forward
Current
A
T
A
=25C
I
F
3
A
T
A
=70C
2.2
Pulsed Diode Forward Current
B
I
FM
20
Power Dissipation
A
T
A
=25C
P
D
2
W
T
A
=70C
1.28
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
C
AO4916A
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 8.5A
(
V
GS
= 10V)
I
D
= 8.5A
(
V
GS
= 10V)
R
DS(ON)
< 17m
<17m
(V
GS
= 10V)
R
DS(ON)
< 27m
<27m
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
General Description
The AO4916A uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard product AO4916A is Pb-free (meets ROHS &
Sony 259 specifications). AO4916AL is a Green Product
ordering option. AO4916A and AO4916AL are
electrically identical.
SOIC8
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
G1
D2
D2
G2
1
2
3
4
8
7
6
5
S1/A
D1/S2/K
D1/S2/K
D1/S2/K
Alpha & Omega Semiconductor, Ltd.
AO4916A
Symbol
Units
R
JL
Symbol
Units
R
JL
R
JL
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Junction-to-Lead
C
Steady-State
71
32
47.5
R
JA
62.5
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
110
110
Maximum Junction-to-Lead
C
Steady-State
35
Typ
Maximum Junction-to-Ambient
A
Steady-State
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient
A
t 10s
40
Thermal Characteristics Schottky
62.5
40
48
74
62.5
C/W
Maximum Junction-to-Ambient
A
Steady-State
Max
C/W
C/W
Parameter: Thermal Characteristics MOSFET Q2
Typ
Max
Maximum Junction-to-Ambient
A
t 10s
R
JA
48
74
110
Maximum Junction-to-Lead
C
Steady-State
35
40
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
Rev 0 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4916A
Symbol
Min
Typ
Max Units
BV
DSS
30
V
0.007 0.05
3.2
10
12
20
I
GSS
100
nA
V
GS(th)
1
1.7
3
V
I
D(ON)
30
A
14.2
17
T
J
=125C
20.5
27
20.3
27
m
g
FS
23
S
V
SD
0.47
0.6
V
I
S
3.5
A
C
iss
955
1250
pF
C
oss
175
pF
C
rss
112
pF
R
g
0.5
0.85
Q
g
(10V)
17
24
nC
Q
g
(4.5V)
9
12
nC
Q
gs
3.4
nC
Q
gd
4.7
nC
t
D(on)
5
6.5
ns
t
r
6
7.5
ns
t
D(off)
19
25
ns
t
f
4.5
6
ns
t
rr
Body Diode + Schottky Reverse Recovery Time
I
F
=8.5A, dI/dt=100A/
s
20
24
ns
Q
rr
Body Diode + Schottky Reverse Recovery Charge
I
F
=8.5A, dI/dt=100A/
s
9.5
12
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Q1 Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
V
R
=30V
mA
Gate-Body leakage current
V
DS
=0V, V
GS
= 20V
V
R
=30V, T
J
=125C
V
R
=30V, T
J
=150C
m
V
GS
=4.5V, I
D
=6A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=10V, V
DS
=5V
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance (FET + Schottky)
Reverse Transfer Capacitance
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=8.5A
SWITCHING PARAMETERS
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
V
DS
=5V, I
D
=8.5A
Diode+Schottky Forward Voltage
I
S
=1A
Maximum Body-Diode+Schottky Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.8
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=8.5A
Total Gate Charge
Gate Source Charge
Gate Drain Charge
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in any
given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 0 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4916A
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
3.5V
4.5V
10V
4V
0
5
10
15
20
25
30
35
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
10
12
14
16
18
20
22
24
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note F)
I
S
(A)
125C
FET+SCHOTTKY
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On resistance vs. Junction Temperature
Norm
al
i
z
ed On-Resi
stance
V
GS
=10V
V
GS
=4.5V
5
10
15
20
25
30
35
40
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On resistance vs. Gate-Source Voltage
R
DS(ON)
(m
)
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=8.5A
25C
I
D
=8A
125C
25C
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4916A
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
200
400
600
800
1000
1200
1400
1600
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capaci
tance (pF)
C
iss
C
oss
FET+SCHOTTKY
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
Norm
al
i
z
ed Transi
ent
Therm
al
Resi
stance
C
rss
V
DS
=15V
I
D
=8.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
T
J(Max)
=150C, T
A
=25C
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
10
s
Alpha & Omega Semiconductor, Ltd.
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