Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
47.5
62.5
74
110
R
JL
37
40
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
Junction and Storage Temperature Range
-55 to 150
C
Thermal Characteristics
T
A
=70C
1.28
W
Power Dissipation
T
A
=25C
P
D
2
A
T
A
=70C
7
Pulsed Drain Current
B
40
Continuous Drain
Current
A
T
A
=25C
I
D
8.8
Drain-Source Voltage
20
V
Gate-Source Voltage
12
V
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Maximum
Units
AO6408
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 8.8A (V
GS
= 10V)
R
DS(ON)
< 18m
(V
GS
= 10V)
R
DS(ON)
< 20m
(V
GS
= 4.5V)
R
DS(ON)
< 25m
(V
GS
= 2.5V)
R
DS(ON)
< 32m
(V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AO6408 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. It offers
operation over a wide gate drive range from 1.8V to
12V. It is ESD protected. This device is suitable for
use as a load switch. Standard product
AO6408 is Pb-
free (meets ROHS & Sony 259 specifications).
AO6408L is a Green Product ordering option.
AO6408 and AO6408L are electrically identical.
G
D
D
S
D
D
1
2
3
6
5
4
TSOP-6
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO6408, AO6408L
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
10
T
J
=55C
25
I
GSS
10
A
BV
GSO
12
V
V
GS(th)
0.5
0.75
1
V
I
D(ON)
40
A
14.4
18
T
J
=125C
18.5
23
16
20
m
20.5
25
m
25.6
32
m
g
FS
33
S
V
SD
0.72
1
V
I
S
3
A
C
iss
1810
2200
pF
C
oss
232
pF
C
rss
200
pF
R
g
1.6
2.2
Q
g
17.9
22
nC
Q
gs
1.5
nC
Q
gd
4.7
nC
t
D(on)
3.3
ns
t
r
5.9
ns
t
D(off)
44
ns
t
f
7.7
ns
t
rr
22
27
ns
Q
rr
9.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
V
DS
=0V, I
G
=250uA
Gate-Source Breakdown Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=8.8A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=10V, R
L
=1.1
,
R
GEN
=3
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
V
DS
=5V, I
D
=8.8A
Diode Forward Voltage
I
S
=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=10V, f=1MHz
Output Capacitance
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=8.8A
m
V
GS
=4.5V, I
D
=8A
V
GS
=2.5V, I
D
=6A
V
GS
=1.8V, I
D
=4A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
V
DS
=16V, V
GS
=0V
A
Gate-Source leakage current
V
DS
=0V, V
GS
=10V
I
F
=8.8A, dI/dt=100A/
s
I
F
=8.8A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev3: August 2005
Alpha & Omega Semiconductor, Ltd.
AO6408, AO6408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=1.5V
2V
2.5V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
V
GS(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
0
10
20
30
40
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
liz
ed
On
-R
esistan
ce
V
GS
=2.5V,6A
V
GS
=10V, 8.8A
V
GS
=4.5V, 8A
0
10
20
30
40
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=6A
V
GS
=1.8V, 4A
V
GS
=1.8V
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO6408, AO6408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
400
800
1200
1600
2000
2400
2800
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
V
DS
=10V
I
D
=8.8A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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