Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
58
80
94
120
R
JL
37
50
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
Junction and Storage Temperature Range
-55 to 150
C
Thermal Characteristics
T
A
=70C
1.1
W
Power Dissipation
T
A
=25C
P
D
1.56
A
T
A
=70C
1.9
Pulsed Drain Current
B
9
Continuous Drain
Current
A
T
A
=25C
I
D
2.3
Drain-Source Voltage
55
V
Gate-Source Voltage
12
V
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Maximum
Units
AO6414
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 55V
I
D
= 2.4A (V
GS
= 4.5V)
R
DS(ON)
< 1
60m (V
GS
= 4.5V)
R
DS(ON)
< 200m
(V
GS
= 2.5V)
General Description
The AO6414 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. It
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch. Standard product
AO6414 is Pb-free (meets
ROHS & Sony 259 specifications). AO6414L is a
Green Product ordering option. AO6414 and
AO6414L are electrically identical.
G
D
D
S
D
D
1
2
3
6
5
4
TSOP-6
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO6414
Symbol
Min
Typ
Max
Units
BV
DSS
55
V
0.002
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.6
1.3
2
V
I
D(ON)
10
A
125
160
T
J
=125C
175
210
157
200
m
g
FS
11
S
V
SD
0.78
1
V
I
S
1.9
A
C
iss
214
300
pF
C
oss
31
pF
C
rss
12.6
pF
R
g
1.3
3
Q
g
2.6
3.3
nC
Q
gs
0.6
nC
Q
gd
0.8
nC
t
D(on)
2.3
ns
t
r
2.4
ns
t
D(off)
16.5
ns
t
f
2
ns
t
rr
20
30
ns
Q
rr
17
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=25V, I
D
=2.4A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=25V, R
L
=10.4
,
R
GEN
=3
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
V
DS
=5V, I
D
=2.4A
Diode Forward Voltage
I
S
=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
Output Capacitance
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=2.4A
m
V
GS
=2.5V, I
D
=1.5A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
V
DS
=44V, V
GS
=0V
A
Gate-Source leakage current
V
DS
=0V, V
GS
=12V
I
F
=2.4A, dI/dt=100A/
s
I
F
=2.4A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=10mA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev0: Nov. 2005
Alpha & Omega Semiconductor, Ltd.
AO6414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=2V
3.5V
2.5V
4.5V
10V
0
2
4
6
8
1
1.25
1.5
1.75
2
2.25
2.5
V
GS(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
100
120
140
160
180
200
0
1
2
3
4
5
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
2
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
ed
On
-R
esistan
ce
V
GS
=2.5V,1.5A
V
GS
=4.5V, 2.4A
50
100
150
200
250
300
350
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
I
D
=2.4A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO6414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
1
2
3
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
50
100
150
200
250
300
350
400
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
V
DS
=25V
I
D
=2.4A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=80C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
PDF 
ZIP