Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
82
100
111
140
R
JL
56
70
Junction and Storage Temperature Range
A
P
D
C
1.25
0.8
-55 to 150
T
A
=70C
I
D
-3.3
-2.7
-14
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Gate-Source Voltage
Drain-Source Voltage
-20
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO6415
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -20V
I
D
= -3.3A (V
GS
= -10V)
R
DS(ON)
< 75m
(V
GS
= -10V)
R
DS(ON)
< 100m
(V
GS
= -4.5V)
R
DS(ON)
< 150m
(V
GS
= -2.5V)
ESD Rating: 2000V HBM
General Description
The AO6415 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product AO6415 is Pb-free (meets ROHS & Sony
259 specifications). AO6415L is a Green Product ordering
option. AO6415 and AO6415L are electrically identical.
TSOP6
Top View
G
D
D
S
D
D
1
2
3
6
5
4
D
S
G
Alpha & Omega Semiconductor, Ltd.
AO6415
Symbol
Min
Typ
Max
Units
BV
DSS
-20
V
-0.003
-0.5
T
J
=55C
-2.5
1
A
10
A
V
GS(th)
-0.6
-0.9
-1.4
I
D(ON)
-20
A
62
75
T
J
=125C
84
105
80
100
m
115
150
m
g
FS
7
S
V
SD
-0.65
-0.82
-1
V
I
S
-1.5
A
C
iss
512
620
pF
C
oss
77
pF
C
rss
62
pF
R
g
9.2
13
Q
g
4.9
6
nC
Q
gs
0.8
nC
Q
gd
1.2
nC
t
D(on)
11
13
ns
t
r
8
10
ns
t
D(off)
34
41
ns
t
f
12
15
ns
t
rr
13
17
ns
Q
rr
4
6
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-2A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-2.5V, I
D
=-1A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-3.3A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-16V, V
GS
=0V
Zero Gate Voltage Drain Current
I
GSS
Gate-Body leakage current
V
DS
=0V, V
GS
=10V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
GS
=-4.5V, I
D
=-2A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3.3A
I
F
=-2A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=5
,
R
GEN
=3
V
DS
=0V, V
GS
=12V
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
m
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 0 : Nov 2005
Alpha & Omega Semiconductor, Ltd.
AO6415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A)
V
GS
=-2.5V
-3.5V
-4.5V
-10V
0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
20
40
60
80
100
120
140
0
1
2
3
4
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25C
125C
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
I
D
=-1A, V
GS
=-2.5V
I
D
=-2A, V
GS
=-4.5V
I
D
=-3.3A, V
GS
=-10V
40
80
120
160
200
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-2.5V
V
GS
=-10V
V
GS
=-4.5V
I
D
=-3.3A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO6415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
1
2
3
4
5
6
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
o
l
ts)
0
200
400
600
800
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
C
oss
C
rss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=140C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
-V
DS
(Volts)
-I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
V
DS
=-10V
I
D
=-2A
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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