Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
47.5
62.5
74
110
R
JL
37
50
Junction and Storage Temperature Range
A
P
D
C
2
1.4
-55 to 150
T
A
=70C
I
D
-5
-4.2
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Gate-Source Voltage
Drain-Source Voltage
-30
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO6419
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -5 A (V
GS
= -10V)
R
DS(ON)
< 52m
(V
GS
= -10V)
R
DS(ON)
< 87m
(V
GS
= -4.5V)
R
DS(ON)
< 110m
(V
GS
= -3.5V)
General Description
The AO6419 uses advanced trench technology to
provide excellent R
DS(ON)
with
low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO6419 is Pb-free
(meets ROHS & Sony 259 specifications). AO6419L
is a Green Product ordering option. AO6419 and
AO6419L are electrically identical.
TSOP6
Top View
G
D
S
G
D
D
S
D
D
1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.
AO6419
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1
-1.8
-3
V
I
D(ON)
-20
A
39
52
T
J
=125C
54
70
67
87
m
85
110
m
g
FS
6
8.6
S
V
SD
-0.77
-1
V
I
S
-2.8
A
C
iss
700
840
pF
C
oss
120
pF
C
rss
75
pF
R
g
10
15
Q
g
(10V)
14.7
18
nC
Q
g
(4.5V)
7.6
9.5
nC
Q
gs
2
nC
Q
gd
3.8
nC
t
D(on)
8.3
ns
t
r
5
ns
t
D(off)
29
ns
t
f
14
ns
t
rr
23.5
30
ns
Q
rr
13.4
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-5A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=5.0A
Reverse Transfer Capacitance
I
F
=-5A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-4.5V, I
D
=-4A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-5A
V
GS
=-3.5V, I
D
=-1A
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-5A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=3
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
Input Capacitance
Output Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 0: Nov 2005
Alpha & Omega Semiconductor, Ltd.
AO6419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
5
10
15
20
0.00
1.00
2.00
3.00
4.00
5.00
-V
DS
(Volts)
Figure 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-3V
-3.5V
-4V
-10V
-4.5V
-5V
-6V
0
2
4
6
8
10
0
1
2
3
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
25C
125C
V
DS
=-5V
20
40
60
80
100
1
3
5
7
9
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
V
GS
=-4.5V
V
GS
=-10V
V
GS
=-3.5V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
rmal
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=-10V
V
GS
=-4.5V
V
GS
=-3.5V
20
40
60
80
100
120
140
160
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=-5A
25C
125C
I
D
=-5A
-2.5V
Alpha & Omega Semiconductor, Ltd.
AO6419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Vo
l
ts
)
0
200
400
600
800
1000
1200
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
t
a
n
ce (
p
F
)
C
iss
C
oss
C
rss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
rmal
i
z
ed
T
r
an
si
en
t
T
h
e
rmal
Resi
st
an
ce
0.1
1
10
100
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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