Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Typ
Max
78
110
106
150
R
JL
64
80
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
-55 to 150
-55 to 150
T
A
=70C
Power Dissipation
T
A
=25C
P
D
30
-30
12
Drain-Source Voltage
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
W
3.4
2.7
30
1.15
0.73
-1.8
-2.3
1.15
0.73
-30
12
Gate-Source Voltage
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
AO6601
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 3.4A
(V
GS
= 10V)
-2.3A
(V
GS
= -10V)
R
DS(ON)
< 60m
(V
GS
= 10V)
< 135m
(V
GS
= -10V)
< 75m
(V
GS
= 4.5V)
< 185m
(V
GS
= -4.5V)
< 115m
(V
GS
= 2.5V)
< 265m
(V
GS
= -2.5V)
General Description
The AO6601 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6601 is Pb-free (meets ROHS &
Sony 259 specifications). AO6601L is a Green
Product ordering option. AO6601 and AO6601L are
electrically identical.
G1
D1
S1
G2
D2
S2
n-channel
p-channel
TSOP6
Top View
G2
S2
G1
D2
S1
D1
1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.
AO6601
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.6
1
1.4
V
I
D(ON)
10
A
50
60
T
J
=125C
75
60
75
m
88
115
m
g
FS
7.8
S
V
SD
0.8
1
V
I
S
1.5
A
C
iss
390
pF
C
oss
54.5
pF
C
rss
41
pF
R
g
3
Q
g
4.34
nC
Q
gs
1.38
nC
Q
gd
0.6
nC
t
D(on)
4
ns
t
r
2
ns
t
D(off)
22
ns
t
f
3
ns
t
rr
11
ns
Q
rr
5.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=15V, I
D
=3A
I
F
=3A, dI/dt=100A/
s
Gate resistance
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Output Capacitance
Reverse Transfer Capacitance
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
n-channel MOSFET Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=12V
m
V
GS
=4.5V, I
D
=3A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
V
GS
=2.5V, I
D
=2A
V
DS
=5V, I
D
=3A
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=3A
Forward Transconductance
V
GS
=10V, V
DS
=15V, R
L
=5
,
R
GEN
=6
I
F
=3A, dI/dt=100A/
s
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
Rev 3 : June 2005
Alpha & Omega Semiconductor, Ltd.
AO6
601 n-channel typical characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=2V
2.5V
3V
4.5V
10V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
0
25
50
75
100
125
150
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
mal
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
0
50
100
150
200
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=2A
25C
125C
Alpha and Omega Semiconductor, Ltd.
AO6601 n-channel typical characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
1
2
3
4
5
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Vo
l
ts
)
0
100
200
300
400
500
600
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
ap
aci
t
an
ce (
p
F
)
C
iss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Pow
e
r
(W)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
mal
i
z
ed
T
r
an
si
en
t
T
h
er
mal
R
esi
st
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
V
DS
=15V
I
D
=3.4A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=110C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
AO6601
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-0.6
-1
-1.4
V
I
D(ON)
-10
A
107
135
T
J
=125C
135
185
m
195
265
m
g
FS
8
S
V
SD
-0.85
-1
V
I
S
-1.35
A
C
iss
409
pF
C
oss
55
pF
C
rss
42
pF
R
g
12
Q
g
4.8
nC
Q
gs
1.34
nC
Q
gd
0.72
nC
t
D(on)
13
ns
t
r
10
ns
t
D(off)
28
ns
t
f
13
ns
t
rr
26
ns
Q
rr
15.6
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
=-2.5A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=-2.5A, dI/dt=100A/
s
Turn-On DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=6
,
R
GEN
=6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-15V, I
D
=-2.5A
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
V
DS
=-5V, I
D
=-2.3A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-2.3A
m
V
GS
=-4.5V, I
D
=-2A
V
GS
=-2.5V, I
D
=-1A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
On state drain current
V
GS
=-4.5V, V
DS
=-5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=12V
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V
p-channel MOSFET Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 3 : June 2005
Alpha & Omega Semiconductor, Ltd.
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