Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
160
200
180
220
R
JL
130
160
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Maximum
Units
V
Gate-Source Voltage
8
V
I
D
2.2
Drain-Source Voltage
20
T
A
=25C
P
D
0.625
A
T
A
=70C
1.75
Pulsed Drain Current
B
10
Continuous Drain
Current
A
T
A
=25C
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
T
A
=70C
0.4
Junction and Storage Temperature Range
-55 to 150
C
Power Dissipation
A
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
AO7408
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 2.2 A (V
GS
= 4.5V)
R
DS(ON)
< 82m
(V
GS
= 4.5V)
R
DS(ON)
< 95m
(V
GS
= 2.5V)
R
DS(ON)
< 120m
(V
GS
= 1.8V)
General Description
The AO7408 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
Standard Product AO7408 is Pb-free (meets ROHS
& Sony 259 specifications). AO7408L is a Green
Product ordering option. AO7408 and AO7408L are
electrically identical.
G
D
S
SC-70-6
(SOT-323)
Top View
S
G
D
D
D
D
Alpha Omega Semiconductor, Ltd.
AO7408
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.4
0.6
0.8
V
I
D(ON)
10
A
67
82
T
J
=125C
99
125
78
95
m
96
120
m
g
FS
6.7
S
V
SD
0.69
1
V
I
S
0.91
A
C
iss
499
pF
C
oss
65
pF
C
rss
56
pF
R
g
3
Q
g
6.02
nC
Q
gs
0.41
nC
Q
gd
1.35
nC
t
D(on)
6.5
ns
t
r
8
ns
t
D(off)
61
ns
t
f
16
ns
t
rr
23.2
ns
Q
rr
8.6
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=16V, V
GS
=0V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
A
Gate-Body leakage current
V
DS
=0V, V
GS
=8V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=2.2A
m
V
GS
=2.5V, I
D
=2.0A
V
GS
=1.8V, I
D
=1A
Forward Transconductance
V
DS
=5V, I
D
=1.6A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Gate Drain Charge
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Body Diode Reverse Recovery Charge I
F
=2.2A, dI/dt=100A/
s
Turn-On DelayTime
V
GS
=5V, V
DS
=10V, R
L
=4.5
,
R
GEN
=6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=4.5V, V
DS
=5V
On state drain current
Body Diode Reverse Recovery Time
I
F
=2.2A, dI/dt=100A/
s
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=2.2A
Gate Source Charge
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 2 : June 2005
Alpha Omega Semiconductor, Ltd.
AO7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
4
8
12
16
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=1.5V
2V
2.5V
8V
3V
4.5V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
25C
125C
V
DS
=5V
60
80
100
120
140
0
2
4
6
8
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
liz
ed
On
-R
esistan
ce
V
GS
=1.8V
V
GS
=4.5V
V
GS
=2.5V
I
D
=2.0A
I
D
=1.0A
60
80
100
120
140
160
180
1
2
3
4
5
6
7
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=2.2A
25C
125C
I
D
=2.2A
Alpha Omega Semiconductor, Ltd.
AO7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
1
2
3
4
5
6
7
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
200
400
600
800
1000
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
C
oss
C
rss
0
4
8
12
16
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms 1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
V
DS
=10V
I
D
=2.2A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=360C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
T
on
T
P
D
T
on
P
D
Alpha Omega Semiconductor, Ltd.
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