Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
64
83
89
120
R
JL
53
70
Junction and Storage Temperature Range
A
P
D
C
1.5
1
-55 to 150
T
A
=70C
I
D
-4
-3.5
-30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
8
Gate-Source Voltage
Drain-Source Voltage
-20
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO8403
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -20V
I
D
= -4 A (V
GS
= -4.5V)
R
DS(ON)
< 42m
(V
GS
= -4.5V)
R
DS(ON)
< 52m
(V
GS
= -2.5V)
R
DS(ON)
< 70m
(V
GS
= -1.8V)
ESD Rating: 3000V HBM
General Description
The AO8403 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch or in PWM applications. It is ESD
protected.
Standard Product AO8403 is Pb-free (meets
ROHS & Sony 259 specifications). AO8403L is a Green
Product ordering option. AO8403 and AO8403L are
electrically identical.
D
S
G
D
S
S
G
1
2
3
4
8
7
6
5
TSSOP-8
Top View
D
S
S
D
Alpha & Omega Semiconductor, Ltd.
AO8403
Symbol
Min
Typ
Max
Units
BV
DSS
-20
V
-1
T
J
=55C
-5
1
A
10
A
V
GS(th)
-0.3
-0.55
-1
I
D(ON)
-25
A
35
42
T
J
=125C
48
60
45
52
m
56
70
m
g
FS
8
16
S
V
SD
-0.78
-1
V
I
S
-2.2
A
C
iss
1450
1750
pF
C
oss
205
pF
C
rss
160
pF
R
g
6.5
Q
g
17.2
21
nC
Q
gs
1.3
nC
Q
gd
4.5
nC
t
D(on)
9.5
ns
t
r
17
ns
t
D(off)
94
ns
t
f
35
ns
t
rr
31
ns
Q
rr
13.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-4A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-1.8V, I
D
=-3A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-4A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-16V, V
GS
=0V
V
DS
=0V, V
GS
=8V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=4.5V
I
GSS
m
V
GS
=-2.5V, I
D
=-4A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-4A
I
F
=-4A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-4A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.5
,
R
GEN
=3
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Gate-Body leakage current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev1: August 2005
Alpha & Omega Semiconductor, Ltd.
AO8403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-1.5V
-2.0V
-2.5V
-4.5V
-8V
-3.0V
0
2
4
6
8
10
0
0.5
1
1.5
2
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
20
40
60
80
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
I
D
=-4A, V
GS
=-2.5V
I
D
=-2A, V
GS
=-1.8V
I
D
=-4A, V
GS
=-4.5V
20
30
40
50
60
70
80
90
100
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=-4A
25C
125C
25C
125C
V
DS
=-5V
V
GS
=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
Alpha & Omega Semiconductor, Ltd.
AO8403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
5
10
15
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts)
0
400
800
1200
1600
2000
2400
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
C
oss
C
rss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=90C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
V
DS
=-10V
I
D
=-4A
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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