Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
73
90
96
125
R
JL
63
75
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
8
Gate-Source Voltage
Drain-Source Voltage
-12
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
-5.8
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
1.4
0.9
-55 to 150
T
A
=70C
I
D
-7
AO8803
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -12V
I
D
= -7 A (V
GS
= -4.5V)
R
DS(ON)
< 18m
(V
GS
= -4.5V)
R
DS(ON)
< 22m
(V
GS
= -2.5V)
R
DS(ON)
< 29m
(V
GS
= -1.8V)
ESD Rating: 4KV HBM
General Description
The AO8803 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
Standard Product
AO8803 is Pb-free (meets ROHS & Sony 259
specifications). AO8803L is a Green Product ordering
option. AO8803 and AO8803L are electrically
identical.
D1
S1
G1
D2
S2
G2
G1
S1
S1
D1
G2
S2
S2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
D2
Alpha & Omega Semiconductor, Ltd.
AO8803
Symbol
Min
Typ
Max
Units
BV
DSS
-12
V
-1
T
J
=55C
-5
1
A
10
A
V
GS(th)
-0.3
-0.55
-1
I
D(ON)
-20
A
15
18
T
J
=125C
19
23
18
22
m
22
29
m
28
m
g
FS
34
S
V
SD
-0.78
-1
V
I
S
-2.5
A
C
iss
3960
4750
pF
C
oss
910
pF
C
rss
757
pF
R
g
6.9
8.5
Q
g
36.6
44
nC
Q
gs
3.4
nC
Q
gd
10
nC
t
D(on)
15
ns
t
r
43
ns
t
D(off)
158
ns
t
f
95
ns
t
rr
49
60
ns
Q
rr
19.4
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-7A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-1.5V, I
D
=-1A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-7A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-9.6V, V
GS
=0V
V
DS
=0V, V
GS
=8V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=4.5V
I
GSS
m
V
GS
=-2.5V, I
D
=-6A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-7A
V
GS
=-1.8V, I
D
=-5A
I
F
=-7A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-6V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-6V, I
D
=-7A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off Delay Time
V
GS
=-4.5V, V
DS
=-6V, R
L
=0.86
,
R
GEN
=3
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On Delay Time
DYNAMIC PARAMETERS
Gate-Body leakage current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 4 : September 2005
Alpha & Omega Semiconductor, Ltd.
AO8803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A)
V
GS
=-1.0V
-1.5V
-2.0V
-8V
-3.0V
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
10
15
20
25
30
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25C
125C
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
I
D
=-6A, V
GS
=-2.5V
I
D
=-5A, V
GS
=-1.8V
I
D
=-7A, V
GS
=-4.5V
10
15
20
25
30
35
40
45
50
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=-7A
25C
125C
25C
125C
V
DS
=-5V
V
GS
=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
Alpha & Omega Semiconductor, Ltd.
AO8803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
5
10
15
20
25
30
35
40
45
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
o
l
ts)
0
800
1600
2400
3200
4000
4800
5600
6400
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
C
oss
C
rss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=90C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
V
DS
=-10V
I
D
=-7A
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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