Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
64
83
89
120
R
JL
53
70
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
8
Gate-Source Voltage
Drain-Source Voltage
20
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
5.7
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
1.5
1
-55 to 150
T
A
=70C
I
D
7
AO8810
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 7 A (V
GS
= 4.5V)
R
DS(ON)
< 20m
(V
GS
= 4.5V)
R
DS(ON)
< 24m
(V
GS
= 2.5V)
R
DS(ON)
< 32m
(V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AO8810 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
AO8810L is offered in a lead-free package.
Standard
Product AO8810 is Pb-free (meets ROHS & Sony 259
specifications). AO8810L is a Green Product ordering
option. AO8810 and AO8810L are electrically identical.
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO8810
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
1
T
J
=55C
5
1
A
10
A
V
GS(th)
0.4
0.6
1
V
I
D(ON)
30
A
16.5
20
T
J
=125C
23
28
20
24
m
24
32
m
g
FS
29
S
V
SD
0.76
1
V
I
S
2.5
A
C
iss
1160
pF
C
oss
187
pF
C
rss
146
pF
R
g
1.5
Q
g
16
nC
Q
gs
0.8
nC
Q
gd
3.8
nC
t
D(on)
6.2
ns
t
r
12.7
ns
t
D(off)
51.7
ns
t
f
16
ns
t
rr
17.7
ns
Q
rr
6.7
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=7A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=7A
Reverse Transfer Capacitance
I
F
=7A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=16V, V
GS
=0V
Zero Gate Voltage Drain Current
I
GSS
Gate-Body leakage current
V
DS
=0V, V
GS
=4.5V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=2.5V, I
D
=5.5A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=7A
V
GS
=1.8V, I
D
=5A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=5V, V
DS
=10V, R
L
=1.35
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=7A
Gate Source Charge
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=10V, f=1MHz
Gate Drain Charge
V
DS
=0V, V
GS
=8V
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 3 : June 2005
Alpha & Omega Semiconductor, Ltd.
AO8810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
I
D
(A
)
V
GS
=1V
V
GS
=1.5V
V
GS
=2V
8V
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
25C
125C
V
GS
=5V
10
20
30
40
50
0
5
10
15
20
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
liz
e ON
-R
esistan
ce
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
I
D
=6.5A
10
20
30
40
50
60
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
I
D
=6.5A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO8810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
t
s)
V
DS
=10V
I
D
=7A
0
400
800
1200
1600
2000
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
a
citan
ce (p
F
)
C
iss
C
rss
C
oss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
T
J(Max)
=150C
T
A
=25C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
T
on
T
P
D
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=83C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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