Symbol
Units
V
DS
V
V
GS
V
T
A
=25C
T
A
=70C
I
DM
V
KA
V
T
A
=25C
T
A
=70C
I
FM
T
A
=25C
T
A
=70C
T
J
, T
STG
C
Symbol
Units
R
JL
R
JL
40
C/W
Maximum Junction-to-Ambient
A
Steady-State
67
75
Maximum Junction-to-Lead
C
Steady-State
25
30
Maximum Junction-to-Ambient
A
t 10s
R
JA
36
C/W
54
21
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t 10s
R
JA
24
75
Maximum Junction-to-Lead
C
Junction and Storage Temperature Range
-55 to 150
Parameter: Thermal Characteristics MOSFET
Typ
Max
-55 to 150
P
D
3
3
W
2
2
5
A
3.5
30
A
-6.6
Pulsed Drain Current
B
-40
Gate-Source Voltage
20
Continuous Drain Current
A
I
D
-8
Parameter
MOSFET
Schottky
Drain-Source Voltage
-30
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Power Dissipation
30
Schottky reverse voltage
Continuous Forward Current
A
I
F
Pulsed Forward Current
B
Steady-State
30
40
Maximum Junction-to-Ambient
A
Steady-State
AO4707
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -30V
I
D
= -8A (V
GS
=
-
10V)
R
DS(ON)
< 33m
(V
GS
=
-
10V)
R
DS(ON)
< 56m
(V
GS
=
-
4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.52V@3A
General Description
The AO4707 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters.
Standard Product AO8820 is Pb-free
(meets ROHS & Sony 259 specifications). AO8820L
is a Green Product ordering option. AO8820 and
AO8820L are electrically identical.
G
D
S
A
K
G
S
S
A
D/K
D/K
D/K
D/K
1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.
AO4707
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1.2
-2
-2.4
V
I
D(ON)
40
A
24.5
33
T
J
=125C
33
41
56
m
g
FS
14.5
S
V
SD
-0.76
-1
V
I
S
-4.2
A
C
iss
920
pF
C
oss
190
pF
C
rss
122
pF
R
g
3.6
Q
g
(10V)
18.4
nC
Q
g
(4.5V)
9.3
nC
Q
gs
2.7
nC
Q
gd
4.9
nC
t
D(on)
7.1
ns
t
r
3.4
ns
t
D(off)
18.9
ns
t
f
8.4
ns
t
rr
21.5
ns
Q
rr
12.5
nC
SCHOTTKY PARAMETERS
V
F
0.48
0.52
V
0.07
0.15
4.2
20
15
60
C
T
120
pF
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1.8
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
m
V
GS
=-4.5V, I
D
=-5A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-8A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-8A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
Reverse Transfer Capacitance
I
F
=-8A, dI/dt=100A/
s
Forward Voltage Drop
I
F
=3.0A
I
rm
Maximum reverse leakage current
V
R
=24V
mA
V
R
=24V, T
J
=125C
V
R
=24V, T
J
=150C
Junction Capacitance
V
R
=15V
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev4: August 2005
Alpha & Omega Semiconductor, Ltd.
AO4707
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-3V
-6V
-3.5V
-4V
-10V
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
10
20
30
40
50
60
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.80
1.00
1.20
1.40
1.60
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
rmal
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=-10V
V
GS
=-4.5V
0
10
20
30
40
50
60
70
80
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-7.5A
25C
125C
I
D
=-7.5A
-4.5V
-5V
Alpha & Omega Semiconductor, Ltd.
AO4707
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
4
8
12
16
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Vo
l
ts
)
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
t
an
ce (
p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
rmal
i
z
ed
T
ran
si
en
t
T
h
ermal
Resi
st
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C, T
A
=25C
V
DS
=-15V
I
D
=-8A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AO4707
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
I
F
(Am
p
s)
0
100
200
300
400
500
600
0
5
10
15
20
25
30
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
25
50
75
100
125
150
175
Temperature (C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
L
eakag
e Cu
r
r
e
n
t
(A)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
25
50
75
100
125
150
175
Temperature (C)
V
F
(V
o
l
ts)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Single Pulse
D=T
on
/
T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
f = 1MHz
I
F
=3A
25C
I
F
=5A
V
R
=24V
125C
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
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