Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
48
62.5
74
110
R
JL
35
50
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
12
Gate-Source Voltage
Drain-Source Voltage
20
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
6.1
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
2
1.28
-55 to 150
T
A
=70C
I
D
7.6
AO9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 7.6 A (V
GS
= 10V)
R
DS(ON)
< 23m
(V
GS
= 10V)
R
DS(ON)
< 26m
(V
GS
= 4.5V)
R
DS(ON)
< 34m
(V
GS
= 2.5V)
R
DS(ON)
< 52m
(V
GS
= 1.8V)
General Description
The AO9926B uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. This device is suitable
for use as a uni-directional or bi-directional load
switch.
Standard Product AO
9926B is Pb-free (meets
ROHS & Sony 259 specifications). AO
9926BL is a
Green Product ordering option. AO
9926B and
AO
9926BL are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO9926B
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
1
T
J
=55C
5
I
GSS
100
nA
BV
GSO
12
V
V
GS(th)
0.5
0.8
1
V
I
D(ON)
30
A
18
23
T
J
=125C
25
30
21
26
m
27
34
m
38
52
m
g
FS
24
S
V
SD
0.7
1
V
I
S
3.5
A
C
iss
630
pF
C
oss
164
pF
C
rss
137
pF
R
g
1.5
Q
g
8.8
nC
Q
gs
1
nC
Q
gd
3.7
nC
t
D(on)
5.5
ns
t
r
14
ns
t
D(off)
29
ns
t
f
10.2
ns
t
rr
15.2
ns
Q
rr
6.3
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=7.6A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=7.6A
Reverse Transfer Capacitance
I
F
=7.6A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250uA
V
DS
=16V, V
GS
=0V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=10V
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=2.5V, I
D
=6A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=7.6A
V
GS
=1.8V, I
D
=2A
V
GS
=4.5V, I
D
=7A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=5V, V
DS
=10V, R
L
=1.3
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=7.6A
Gate Source Charge
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=10V, f=1MHz
Gate Drain Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate-Source Breakdown Voltage
V
DS
=0V, I
G
=250uA
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The currentand power rating is based on the t
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 1: June 2005
Alpha & Omega Semiconductor, Ltd.
AO9926B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
I
D
(A
)
V
GS
=1.5V
V
GS
=2V
3V
4V
10V
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
25C
125C
V
GS
=5V
0
10
20
30
40
50
0
5
10
15
20
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
V
GS
=10V
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
e ON
-R
esistan
ce
V
GS
=4 5V
V
GS
=2 5V
V
GS
=1 8V
V
GS
=10V
10
20
30
40
50
60
70
80
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
I
D
=7.6A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO9926B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
t
s)
V
DS
=10V
I
D
=7.6A
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
C
rss
C
oss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
T
J(Max)
=150C
T
A
=25C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
T
on
T
P
D
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
s
100
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150C, T
A
=25C
100m
1s
10s
Alpha & Omega Semiconductor, Ltd.
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