Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
11
17
42
50
R
JC
2.4
3
W
T
A
=70C
2.1
Power Dissipation
A
T
A
=25C
P
DSM
3
Repetitive avalanche energy L=0.1mH
C
135
A
mJ
Junction and Storage Temperature Range
A
P
D
C
50
25
-55 to 175
T
C
=100C
Avalanche Current
C
30
I
D
55
55
100
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25C
Continuous Drain
Current
G
Maximum
Units
Parameter
T
C
=25C
T
C
=100C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Gate-Source Voltage
Drain-Source Voltage
25
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Case
B
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AOB434
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) =25V
I
D
= 55 A
(V
GS
= 10V)
R
DS(ON)
< 9.5 m
(V
GS
= 10V)
R
DS(ON)
< 15 m
(V
GS
= 4.5V)
General Description
The AOB434 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product
AOB434 is Pb-free (meets ROHS &
Sony 259 specifications). AOB434L is a Green
Product ordering option. AOB434 and AOB434L are
electrically identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
AOB434
Symbol
Min
Typ
Max
Units
BV
DSS
25
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.8
3
V
I
D(ON)
100
A
7.3
9.5
T
J
=125C
10
12
12
15
m
g
FS
52
S
V
SD
0.74
1
V
I
S
55
A
C
iss
1230
1476
pF
C
oss
315
pF
C
rss
190
pF
R
g
1.2
2
Q
g
(10V)
25.6
30
nC
Q
g
(4.5V)
12.7
nC
Q
gs
5
nC
Q
gd
7.4
nC
t
D(on)
6.5
ns
t
r
34
ns
t
D(off)
18
ns
t
f
21
ns
t
rr
28
34
ns
Q
rr
14
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250uA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
Reverse Transfer Capacitance
I
F
=30A, dI/dt=100A/
s
V
GS
=0V, V
DS
=12.5V, f=1MHz
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250
A
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
m
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=30A
V
GS
=4.5V, I
D
=20A
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=12.5V, I
D
=30A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=100A/
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=12.5V,
R
L
=0.39
, R
GEN
=3
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
Power dissipation P
DSM
is based on R
JA
and the maximum allowed junction temperature of 150C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 0 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
AOB434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
0
2
4
6
8
10
12
14
16
18
0
10
20
30
40
50
60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
m
alized O
n
-R
esistance
V
GS
=4.5V, 20A
V
GS
=10V, 30A
0
5
10
15
20
25
30
4
5
6
7
8
9
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=30A
25C
125C
0
20
40
60
80
100
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=4V
3.5V
6V
7V
10V
4.5V
5V
3V
Alpha & Omega Semiconductor, Ltd.
AOB434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
5
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pacitance (pF)
C
iss
0
40
80
120
160
200
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Pow
e
r (W)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
N
or
m
aliz
ed Tr
ansient
Ther
m
al R
e
sistance
C
oss
C
rss
0.1
1.0
10.0
100.0
1000.0
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175C, T
A
=25C
V
DS
=12.5V
I
D
=30A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
JC
.R
JC
R
JC
=3C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
AOB434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
N
or
m
aliz
ed Tr
ansient
Ther
m
al R
e
sistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=50C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
10
20
30
40
50
60
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A
), P
eak A
valanche C
ur
r
e
nt
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
ow
e
r
D
issipation (W)
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
Cu
rre
n
t
ra
ti
n
g
I
D
(A)
DD
D
A
V
BV
I
L
t
-
=
T
A
=25C
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Pow
e
r (W)
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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