Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
16.7
25
40
50
R
JC
1.9
2.5
Maximum Junction-to-Case
B
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Pulsed Drain Current
C
Power Dissipation
A
T
A
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
18
18
30
Avalanche Current
C
18
Power Dissipation
B
T
C
=25C
P
D
Continuous Drain
Current
G
Maximum
Units
Parameter
T
C
=25C
T
C
=100C
20
W
Junction and Storage Temperature Range
A
P
DSM
C
2.5
1.6
-55 to 175
T
A
=70C
I
D
A
Repetitive avalanche energy L=0.1mH
C
37
mJ
60
W
T
C
=100C
30
AOD434
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 18A (V
GS
= 10V)
R
DS(ON)
< 14m
(V
GS
= 10V)
R
DS(ON)
< 16m
(V
GS
= 4.5V)
R
DS(ON)
< 21m
(V
GS
= 2.5V)
R
DS(ON)
< 30m
(V
GS
= 1.8V)
ESD Rating: 2KV HBM
General Description
The AOD434 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected to
a 2KV HBM rating.
Standard Product AOD434 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD434L is a Green Product ordering option.
AOD434 and AOD434L are electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.
AOD434
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
1
T
J
=55C
5
I
GSS
10
A
BV
GSO
12
V
V
GS(th)
0.5
0.75
1
V
I
D(ON)
30
A
10.9
14
T
J
=125C
14.3
18
12.6
16
m
16.5
21
m
23.2
30
m
g
FS
36
S
V
SD
0.73
1
V
I
S
18
A
C
iss
1810
pF
C
oss
232
pF
C
rss
200
pF
R
g
1.6
Q
g
(10V)
Total Gate Charge
40.1
nC
Q
g
(4.5V) Total Gate Charge
8.9
Q
gs
Gate Source Charge
1.7
nC
Q
gd
6.2
nC
t
D(on)
4
ns
t
r
15
ns
t
D(off)
42.2
ns
t
f
18.2
ns
t
rr
23.2
ns
Q
rr
4.9
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
DS
=0V, I
G
=250uA
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=18A, dI/dt=100A/
s
V
GS
=10V, I
D
=18A
Reverse Transfer Capacitance
I
F
=18A, dI/dt=100A/
s
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=10V, R
L
=0.56
,
R
GEN
=3
Turn-Off Fall Time
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=16V, V
GS
=0V
V
DS
=0V, V
GS
=10V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate-Source Breakdown Voltage
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Turn-On DelayTime
V
GS
=10V, V
DS
=10V, I
D
=18A
V
GS
=0V, V
DS
=10V, f=1MHz
SWITCHING PARAMETERS
Gate Drain Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
V
GS
=1.8V, I
D
=5A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=18A
V
GS
=4.5V, I
D
=15A
V
GS
=2.5V, I
D
=10A
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The Power
dissipation P
DSM
is based on R
JA
and the maximum allowed junction temperature of 150C. The value in any given application depends on the
user's specific board design, and the maximum temperature
of 175C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev 3 : July 2005
Alpha & Omega Semiconductor, Ltd.
AOD434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=1.5V
2V
2.5V
4.5V
10
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
5
10
15
20
25
30
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
rmal
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
5
10
15
20
25
30
35
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=18A
V
GS
=1.8V
V
GS
=1.8V
25C
125C
I
D
=18A
Alpha & Omega Semiconductor, Ltd.
AOD434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
5
10
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Vo
l
ts
)
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
t
a
n
ce (
p
F
)
C
iss
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
rmal
i
z
ed
T
r
an
si
en
t
T
h
e
rmal
Resi
st
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=10V
I
D
=18A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=50C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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