193
18
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
15
20
44
55
R
JC
1.8
3
T
A
=70C
1.9
Power Dissipation
A
T
A
=25C
P
DSM
2.7
330
A
mJ
W
Junction and Storage Temperature Range
A
P
D
C
50
25
-55 to 175
T
C
=100C
Avalanche Current
C
45
I
D
85
60
200
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25C
Continuous Drain
Current
T
C
=25C
G
T
C
=100C
Repetitive avalanche energy L=0.3mH
C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Gate-Source Voltage
Drain-Source Voltage
30
Maximum
Units
Parameter
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
W
Maximum Junction-to-Case
B
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
AOD458
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 4m
(V
GS
= 10V)
R
DS(ON)
< 5m
(V
GS
= 4.5V)
General Description
The AOD458 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product
AOD458 is Pb-free (meets ROHS & Sony
259 specifications). AOD458L is a Green Product
ordering option. AOD458 and AOD458L are
electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
AOD458
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
0.002
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.7
3
V
I
D(ON)
100
A
3.2
4
T
J
=125C
5
6
3.8
5
g
FS
107
S
V
SD
0.72
1
V
I
S
50
A
C
iss
5750
7500
pF
C
oss
640
pF
C
rss
370
pF
R
g
0.4
1
Q
g
(4.5V)
41
nC
Q
gs
18
nC
Q
gd
10
nC
t
D(on)
13.5
19
ns
t
r
14
20
ns
t
D(off)
58
80
ns
t
f
13.5
19
ns
t
rr
39
55
ns
Q
rr
39
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/
s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
V
GS
=4.5V, V
DS
=15V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
m
Forward Transconductance
Diode Forward Voltage
Static Drain-Source On-Resistance
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=4.5V, I
D
=20A
R
DS(ON)
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
=12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250uA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/
s
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
Power dissipation P
DSM
is based on R
JA
and the maximum allowed junction temperature of 150C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev0:Nov 2005
Alpha & Omega Semiconductor, Ltd.
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.63
494
593
692
830
193
18
59
142
0
20
40
60
80
100
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
2
3
4
5
0
10
20
30
40
50
60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(
O
N)
(m
)
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
25
50
75
100
125
150
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
m
aliz
ed O
n
-R
esistance
V
GS
=10V, 20A
V
GS
=4.5V, 20A
2
4
6
8
10
12
2
3
4
5
6
7
8
9
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=10V
I
D
=20A
25C
125C
0
20
40
60
80
100
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=2.5V
3.0V
10V
4.5V
V
GS
=4.5V
Alpha & Omega Semiconductor, Ltd.
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.63
494
593
692
830
193
18
59
142
0
1
2
3
4
5
0
10
20
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0
5
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pacitance (pF)
C
iss
0
40
80
120
160
200
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Pow
e
r (W)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JC
N
o
r
m
aliz
ed Tr
ansient
Ther
m
al R
e
sistance
C
oss
C
rss
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
JC
.R
JC
R
JC
=3C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175C
T
C
=25C
0.1
1
10
100
1000
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
s
100
s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175C, T
C
=25C
Alpha & Omega Semiconductor, Ltd.
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.63
494
593
692
830
193
18
59
142
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
JA
N
o
r
m
aliz
ed Tr
ansient
Ther
m
al R
e
sistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=55C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
20
30
40
50
60
70
80
90
100
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A
), P
e
ak A
valanche C
u
r
r
e
nt
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
Pow
e
r
D
i
ssipation (W)
0
20
40
60
80
100
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
Cu
rre
n
t
ra
ti
n
g
I
D
(A)
T
A
=25C
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Pow
e
r (W)
T
A
=25C
Tj=150C
Alpha & Omega Semiconductor, Ltd.
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