Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
24
30
53
64
R
JC
2.4
3.5
A
T
A
=70C
8
Continuous Drain
Current
H
T
A
=25C
I
DSM
10
A
Repetitive avalanche energy L=0.3mH
C
184
mJ
Maximum Junction-to-Case
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Pulsed Drain Current
Power Dissipation
B
T
C
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
46
33
120
Avalanche Current
C
35
Power Dissipation
A
T
A
=25C
P
DSM
Continuous Drain
Current
B
Maximum
Units
Parameter
T
C
=25C
T
C
=100C
30
W
Junction and Storage Temperature Range
A
P
D
C
43
21
-55 to 175
T
C
=100C
I
D
2.0
W
T
A
=70C
1
AOL1426
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 46A (V
GS
= 10V)
R
DS(ON)
<10.5m
(V
GS
= 10V)
R
DS(ON)
< 12.5m
(V
GS
= 4.5V)
General Description
The AOL1426 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications.
Standard Product
AOL1426 is Pb-free (meets ROHS & Sony 259
specifications). AOL1426L is a Green Product
ordering option. AOL1426 and AOL1426L are
electrically identical.
Ultra
SO-8
TM
Top View
Bottom tab
connected to
drain
Fits SOIC8
footprint !
S
G
D
D
S
G
Alpha & Omega Semiconductor, Ltd.
AOL1426
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
0.1
A
V
GS(th)
1
1.55
2.5
V
I
D(ON)
120
A
8.5
10.5
T
J
=125C
14.5
18
10.2
12.5
m
g
FS
40
S
V
SD
0.73
1.0
V
I
S
46
A
C
iss
1210
1452
pF
C
oss
330
pF
C
rss
85
pF
R
g
1.2
1.6
Q
g
(10V)
22
28
nC
Q
g
(4.5V)
10
nC
Q
gs
3.7
nC
Q
gd
2.7
nC
t
D(on)
10
ns
t
r
6.3
ns
t
D(off)
21
ns
t
f
2.8
ns
t
rr
36
45
ns
Q
rr
47
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
uA
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
m
V
GS
=4.5V, I
D
=20A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
A: The value of R
JA
is measured with the device in a still air environment with T
A
=25C.
B. The power dissipation P
D
is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R
JA
is the sum of the thermal impedence from junction to case R
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin
a maximum junction temperature of TJ(MAX)=175C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
Rev0: Mar 2006
Alpha & Omega Semiconductor, Ltd.
AOL1424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
30
60
90
120
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
10V
4.5V
V
GS
=3.5V
6V
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
5
7
9
11
13
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
30
60
90
120
150
180
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
No
r
m
al
i
z
ed
On
-Resi
stan
ce
I
D
=20A
V
GS
=10V
V
GS
=4.5
5
10
15
20
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AOL1426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
ts)
0
500
1000
1500
2000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
tan
ce (p
F
)
C
iss
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Po
w
e
r
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
C
oss
C
rss
0.0
0.1
1.0
10.0
100.0
1000.0
0.01
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
s
10ms
1m
0.1
DC
R
DS(ON)
limited
T
J(Max)
=175C
T
C
=25C
100
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
Jc
.R
Jc
R
JC
=3.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max
)
=175C
T
C
=25C
Alpha & Omega Semiconductor, Ltd.
AOL1426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
0.00001
0.0001
0.001
0.01
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A),
P
eak Aval
an
ch
e Cu
r
r
e
n
t
0
10
20
30
40
50
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 13: Power De-rating (Note B)
P
o
w
e
r D
i
s
s
i
pa
t
i
on (
W
)
T
A
=25C
0
20
40
60
0
25
50
75
100
125
150
175
T
CASE
(C)
Figure 14: Current De-rating (Note B)
C
u
rre
nt
ra
t
i
ng I
D
(A)
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
Po
w
e
r
(
W
)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Z
JA
No
r
m
al
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
al
Resi
stan
ce
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=64C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Alpha & Omega Semiconductor, Ltd.
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