Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
32
42
65
100
R
JL
25
35
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
12
Gate-Source Voltage
Drain-Source Voltage
20
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
9.6
40
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
3
1.9
-55 to 150
T
A
=70C
I
D
12
AON3402
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 12A (V
GS
= 4.5V)
R
DS(ON)
< 13m
(V
GS
= 4.5V)
R
DS(ON)
< 17m
(V
GS
= 2.5V)
R
DS(ON)
< 26m
(V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AON3402 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
Standard Product AON3402 is
Pb-free (meets ROHS & Sony 259 specifications).
AON3402L is a Green Product ordering option.
AON3402 and AON3402L are electrically identical.
G
D
S
DFN 3x3
Top View Bottom View
G
S
S
S
D
D
D
D
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd.
AON3402
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
10
T
J
=55C
25
I
GSS
10
A
BV
GSO
12
V
V
GS(th)
0.5
0.78
1
V
I
D(ON)
40
A
10.3
13
T
J
=125C
14.4
18
14.3
17
m
21.7
26
m
g
FS
37
S
V
SD
0.73
1
V
I
S
4.8
A
C
iss
1810
pF
C
oss
232
pF
C
rss
200
pF
R
g
1.6
Q
g
17.9
nC
Q
gs
1.5
nC
Q
gd
4.7
nC
t
D(on)
2.5
ns
t
r
7.2
ns
t
D(off)
49
ns
t
f
10.8
ns
t
rr
20.2
ns
Q
rr
8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=4.5V, V
DS
=10V, I
D
=9.8A
Gate Source Charge
Gate Drain Charge
R
DS(ON)
I
S
=1A,V
GS
=0V
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=10V, f=1MHz
m
V
GS
=2.5V, I
D
=10.5A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
V
GS
=1.8V, I
D
=8.5A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=9.8A
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=V
GS
I
D
=250
A
V
DS
=16V, V
GS
=0V
V
DS
=0V, V
GS
=10V
A
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=12A
Gate-Body leakage current
Static Drain-Source On-Resistance
Gate-Source Breakdown Voltage
V
DS
=0V, I
G
=250uA
Gate Threshold Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=9.8A, dI/dt=100A/
s
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=10V, R
L
=1.0
,
R
GEN
=3
Turn-On DelayTime
I
F
=9.8A, dI/dt=100A/
s
SWITCHING PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 0: April 2006
Alpha & Omega Semiconductor, Ltd.
AON3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=1.5V
2V
2.5V
4.5V
10
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
5
10
15
20
25
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
rmal
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=4.5V
I
D
=12A
V
GS
=2.5V
I
D
=10.5A
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
I
D
=12A
V
GS
=1.8V
I
D
=8.5A
V
GS
=1.8V
25C
125C
Alpha & Omega Semiconductor, Ltd.
AON3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
4
8
12
16
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Vo
l
ts
)
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
t
an
ce (
p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
rmal
i
z
ed
T
ran
si
en
t
T
h
ermal
Resi
st
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=10V
I
D
=12A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=42C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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