Symbol
Units
V
DS
V
V
GS
V
T
A
=25C
T
A
=70C
I
DM
V
KA
V
T
A
=25C
T
A
=70C
I
FM
T
A
=25C
T
A
=70C
T
J
, T
STG
C
Symbol
Units
R
JL
R
JL
130
Maximum Junction-to-Lead
C
Steady-State
40
50
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t 10s
R
JA
60
75
C/W
Maximum Junction-to-Ambient
A
Steady-State
89
75
C/W
Maximum Junction-to-Ambient
A
Steady-State
81
100
Maximum Junction-to-Lead
C
Steady-State
37
45
Maximum Junction-to-Ambient
A
t 10s
R
JA
49
Parameter: Thermal Characteristics MOSFET
Typ
Max
W
1.1
0.62
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.7
0.96
A
1.2
Pulsed Forward Current
B
7
Schottky reverse voltage
20
Continuous Forward Current
A
I
F
1.9
A
-2.7
Pulsed Drain Current
B
-15
Gate-Source Voltage
8
Continuous Drain Current
A
I
D
-3.4
Parameter
MOSFET
Schottky
Drain-Source Voltage
-20
Absolute Maximum Ratings T
A
=25C unless otherwise noted
AON4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -20V
I
D
= -3.4A (V
GS
= -4.5V)
R
DS(ON)
< 90m
(V
GS
= -4.5V)
R
DS(ON)
< 120m
(V
GS
= -2.5V)
R
DS(ON)
< 160m
(V
GS
= -1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AON4701 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the implementation
of a bidirectional blocking switch, or for DC-DC
conversion applications. Standard Product AON4701 is
Pb-free (meets ROHS & Sony 259 specifications).
AON4701L is a Green Product ordering option. AON4701
and AON4701L are electrically identical.
DFN
3X2
A
K
G
D
S
G
S
A
A
D
D
K
K
1
2
3
4
8
7
6
5
AON4701
Symbol
Min
Typ
Max
Units
BV
DSS
-20
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-0.3
-0.63
-1
V
I
D(ON)
-15
A
73
90
T
J
=125C
102
125
95
120
m
123
160
m
g
FS
4
7
S
V
SD
-0.83
-1
V
I
S
-2
A
C
iss
540
pF
C
oss
72
pF
C
rss
49
pF
R
g
12
Q
g
6.1
nC
Q
gs
0.6
nC
Q
gd
1.6
nC
t
D(on)
10
ns
t
r
12
ns
t
D(off)
44
ns
t
f
22
ns
t
rr
21
ns
Q
rr
7.5
nC
SCHOTTKY PARAMETERS
V
F
0.39
0.5
V
0.1
20
C
T
34
pF
t
rr
5.2
10
ns
Q
rr
0.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
SchottkyReverse Recovery Time
I
F
=1A, dI/dt=100A/
s
Schottky Reverse Recovery Charge
I
F
=1A, dI/dt=100A/
s
mA
V
R
=16V, T
J
=125C
Junction Capacitance
V
R
=10V
Forward Voltage Drop
I
F
=0.5A
I
rm
Maximum reverse leakage current
V
R
=16V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-3.8A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-1.8V, I
D
=-1.5A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3.4A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-16V, V
GS
=0V
V
DS
=0V, V
GS
=8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-2.5V, I
D
=-2.5A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3.4A
I
F
=-3.8A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3.8A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.6
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 0. December 2005
Alpha & Omega Semiconductor, Ltd.
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
165
0
5
10
15
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-1.5V
-2.0V
-2.5V
-4.5V
-8V
-3.0V
0
2
4
6
0
0.5
1
1.5
2
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
25C
125C
V
DS
=-5V
50
60
70
80
90
100
110
120
130
140
150
160
0
1
2
3
4
5
6
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(
O
N)
(m
)
V
GS
=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
ed
O
n
-
R
esist
an
ce
V
GS
=-2.5V
I
D
=-2.5A
V
GS
=-1.8V
I
D
=-1.5A
V
GS
=-4.5V
I
D
=-3.4A
50
100
150
200
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
I
D
=-3.4A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
165
0
1
2
3
4
5
0
2
4
6
8
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts
)
0
200
400
600
800
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
ap
acit
an
ce (
p
F
)
C
iss
C
oss
C
rss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
aliz
ed
T
r
an
sien
t
T
h
e
r
m
al R
esist
an
ce
T
on
T
P
D
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=75C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
mps
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100s
10ms
1ms
0.1s
1s
DC
R
DS(ON)
limited
10s
T
J(Max)
=150C
T
A
=25C
V
DS
=-10V
I
D
=-3.4A
Single Pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd.
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
I
F
(A
m
p
s)
0
20
40
60
80
100
0
5
10
15
20
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
0
25
50
75
100
125
150
Temperature (C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
L
eakag
e C
u
r
r
e
n
t
(A
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
150
Temperature (C)
V
F
(V
ol
ts)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=75C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
f = 1MHz
I
F
=0.5A
25C
V
R
=16V
125C
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
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