Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Typ
Max
40
50
67
80
R
JL
33
40
Symbol
Typ
Max
38
50
66
80
R
JL
30
40
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
A
Steady-State
C/W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics: p-channel
C/W
C/W
Units
C/W
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient
A
t 10s
R
JA
T
A
=70C
Power Dissipation
T
A
=25C
P
D
30
-30
20
Drain-Source Voltage
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
W
7.5
6
30
2.5
1.6
-5.3
-6.6
2.5
1.6
-30
20
Gate-Source Voltage
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
AOP600
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.5A (V
GS
= 10V) -6.6A
R
DS(ON)
< 28m
< 35m (V
GS
=
-
10V)
< 43m
< 58m (V
GS
=
-
4.5V)
General Description
The AOP600 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AOP600 is Pb-free (meets ROHS
& Sony 259 specifications). AOP600L is a Green
Product ordering option. AOP600 and AOP600L are
electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
PDIP-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
AOP600
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.8
3
V
I
D(ON)
30
A
22.6
28
T
J
=125C
33
43
m
g
FS
12
16
S
V
SD
0.76
1
V
I
S
4
A
C
iss
680
820
pF
C
oss
102
pF
C
rss
77
pF
R
g
3
3.6
Q
g
(10V)
13.84
16.6
nC
Q
g
6.74
8.1
nC
Q
gs
1.82
nC
Q
gd
3.2
nC
t
D(on)
4.6
ns
t
r
4.1
ns
t
D(off)
20.6
ns
t
f
5.2
ns
t
rr
16.5
20
ns
Q
rr
7.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery charge
Body Diode Reverse Recovery time
Total Gate Charge
V
GS
=4.5V, V
DS
=15V, I
D
=7.5A
I
F
=7.5A, dI/dt=100A/
s
I
F
=7.5A, dI/dt=100A/
s
Turn-Off DelayTime
Turn-Off Fall Time
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=2.0
,
R
GEN
=6
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Body Diode Forward Voltage
I
S
=1A, V
GS
=0V
V
GS
=0V, V
DS
=15V, f=1MHz
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance.
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Maximum Body-DiodeContinuous Current
DYNAMIC PARAMETERS
m
V
GS
=4.5V, I
D
=6.0A
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=7.5A
Forward Transconductance
V
DS
=5V, I
D
=7.5A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=10V, V
DS
=5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
n-channel MOSFET Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 4 : Sept 2005
Alpha & Omega Semiconductor, Ltd.
AOP600
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
10
20
30
40
50
60
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body diode characteristics
I
S
Am
ps
125C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
50
100
150
200
Temperature ( C)
Figure 4: On-Resistance vs. Junction Temperature
Norm
a
lize
d O
n
-
R
e
s
i
s
t
a
n
c
e
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
70
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=7.5A
125C
25C
25C
I
D
=7.5A
5V
6V
Alpha & Omega Semiconductor, Ltd.
AOP600
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge characteristics
V
GS
(Vo
l
ts)
0
100
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
aci
tan
ce (p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
wer
W
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
Norm
a
lize
d Tra
n
s
i
e
n
t
T
h
e
r
m
al
R
esi
stan
ce
C
oss
C
rss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
I
D
(A
mp
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=7.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=50C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
10
s
Alpha & Omega Semiconductor, Ltd.
AOP600
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1.2
-2
-2.4
V
I
D(ON)
30
A
28
35
T
J
=125C
37
45
44
58
m
g
FS
13
S
V
SD
-0.76
-1
V
I
S
-4.2
A
C
iss
920
1100
pF
C
oss
190
pF
C
rss
122
pF
R
g
3.6
4.4
Q
g
(10V)
18.5
22.2
nC
Q
g
(4.5V)
9.6
11.6
nC
Q
gs
2.7
nC
Q
gd
4.5
nC
t
D(on)
7.7
ns
t
r
5.7
ns
t
D(off)
20.2
ns
t
f
9.5
ns
t
rr
20
24
ns
Q
rr
8.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4 : Sept 2005
p-channel MOSFET Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
m
V
GS
=-4.5V, I
D
=-5A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
On state drain current
V
GS
=-10V, V
DS
=-5V
V
DS
=-5V, I
D
=-6.6A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=-10V, I
D
=-6.6A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-6.6A
Turn-On DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=2.3
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=-6.6A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=-6.6A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any en application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
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