Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
I
AR
A
E
AR
mJ
T
J
, T
STG
C
Symbol
Typ
Units
n-ch
45
55
C/W
n-ch
78
95
C/W
R
JL
n-ch
30
40
C/W
p-ch
38.5
55
C/W
p-ch
78
95
C/W
R
JL
p-ch
28
40
C/W
Thermal Characteristics: n-channel+schottky and p-channel
-55 to 150
-55 to 150
20
Avalanche Current
B
Repetitive avalanche energy 0.1mH
B
15
11
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
30
-30
20
Drain-Source Voltage
20
Gate-Source Voltage
Max
20
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
W
7.7
6.1
30
2.3
1.45
-4.9
-6.2
2.3
1.45
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
R
JA
Maximum Junction-to-Ambient
A
Steady-State
-30
T
A
=70C
Power Dissipation
T
A
=25C
P
D
Steady-State
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t 10s
G2
S2/A
G1
S1
D2/K
D2/K
D1
D1
1
2
3
4
8
7
6
5
N-ch
P-ch
PDIP-8
AOP610
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.7A (V
GS
=10V) -6.2A (V
GS
=10V)
R
DS(ON)
R
DS(ON)
< 24m
(V
GS
=10V) < 37m
(V
GS
= -10V)
< 42m
(V
GS
=4.5V) < 60m
(V
GS
= -4.5V)
ESD rating: 1500V (HBM)
General Description
The AOP610 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications. A
Schottky diode in parallel with the n-channel
FET reduces body diode related losses. It is
ESD protected.
Standard product AOP610 is
Pb-free (meets ROHS & Sony 259
specifications). AOP610L is a Green Product
ordering option. AOP610 and AOP610L are
electrically identical.
n-channel
p-channel
G2
D2
S2
G1
D1
S1
K2
A2
Alpha & Omega Semiconductor, Ltd.
AOP610
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
2
50
T
J
=55C
125
I
GSS
10
A
V
GS(th)
1
2
3
V
I
D(ON)
20
A
20
24
T
J
=125C
29
35
34
42
m
g
FS
10
18
S
V
SD
0.5
1
V
I
S
3
A
C
iss
543
630
pF
C
oss
142
pF
C
rss
76
pF
R
g
2.1
3
Q
g
(10V)
11
15
nC
Q
g
(4.5V)
5.3
7
nC
Q
gs
1.9
nC
Q
gd
4
nC
t
D(on)
4.7
7
ns
t
r
4.9
10
ns
t
D(off)
16.2
22
ns
t
f
3.5
7
ns
t
rr
15.7
20
ns
Q
rr
7.9
10
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
I
S
=1A
V
GS
=10V, I
D
=7.7A
Diode Forward Voltage
V
GS
=10V, V
DS
=15V, R
L
=1.9
,
R
GEN
=3
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=7.7A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
V
GS
=4.5V, I
D
=4A
V
DS
=5V, I
D
=7.7A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=10V, V
DS
=5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
N-Channel+Schottky Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge
Total Gate Charge
I
F
=7.7A, dI/dt=100A/
s
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=7.7A, dI/dt=100A/
s
Input Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient. R
JL
and
R
JC
are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
F. Rev 0: October 2005
Alpha & Omega Semiconductor, Ltd.
AOP610
N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
10
15
20
25
30
35
40
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body diode characteristics
I
S
Am
p
s
125C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
0
25
50
75
100
125
150
175
Temperature ( C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
liz
ed
On
-R
esistan
ce
V
GS
=10V
I
D
=7.7A
V
GS
=4.5V
I
D
=4A
10
20
30
40
50
60
70
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=7.7A
125C
25C
25C
5V
Alpha & Omega Semiconductor, Ltd.
AOP610
N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge characteristics
V
GS
(V
ol
ts)
0
100
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r W
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
e
r
m
a
l R
esistan
ce
C
oss
C
rss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=7.7A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=55C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
10
s
Alpha & Omega Semiconductor, Ltd.
AOP610
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
10
A
V
GS(th)
-1
-1.8
-3
V
I
D(ON)
30
A
30.5
37
T
J
=125C
43
52
47
60
m
g
FS
12.5
S
V
SD
-0.77
-1
V
I
S
3
A
C
iss
1040
1250
pF
C
oss
179
pF
C
rss
134
pF
R
g
5
10
Q
g
(10V)
16.8
22
nC
Q
g
(4.5V)
8.7
12
nC
Q
gs
3.4
nC
Q
gd
5
nC
t
D(on)
9
12
ns
t
r
5.7
11
ns
t
D(off)
22.7
30
ns
t
f
10.2
20
ns
t
rr
21.7
27
ns
Q
rr
13.6
18
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
P-Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
m
V
GS
=-4.5V, I
D
=4A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
On state drain current
V
GS
=-10V, V
DS
=-5V
V
DS
=-5V, I
D
=-6.2A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=-10V, I
D
=-6.2A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-6.2A
Turn-On DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=2.5
,
R
GEN
=3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=-6.2A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=-6.2A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient. R
JL
and R
JC
are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
F. Rev 0: October 2005
Alpha & Omega Semiconductor, Ltd.
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