Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
37
50
74
90
R
JL
28
40
W
Junction and Storage Temperature Range
A
P
D
C
3.1
2
-55 to 150
T
A
=70C
I
D
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
60
Maximum Junction-to-Ambient
A
Steady-State
4.7
3.8
20
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
20
Pulsed Drain Current
B
Power Dissipation
T
A
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
AOP804
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 4.7A (V
GS
= 10V)
R
DS(ON)
< 55m
(V
GS
= 10V)
R
DS(ON)
< 75m
(V
GS
= 4.5V)
General Description
The AOP804 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AOP804 is Pb-free
(meets ROHS & Sony 259 specifications). AOP804L
is a Green Product ordering option. AOP804 and
AOP804L are electrically identical.
G1
D1
S1
G2
D2
S2
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
PDIP-8
Alpha & Omega Semiconductor, Ltd.
AOP804
Symbol
Min
Typ
Max
Units
BV
DSS
60
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
2.3
3
V
I
D(ON)
20
A
42
56
T
J
=125C
75
54
77
m
g
FS
11
S
V
SD
0.78
1
V
I
S
4
A
C
iss
450
540
pF
C
oss
60
pF
C
rss
25
pF
R
g
1.65
2
Q
g
(10V)
8.5
10.5
nC
Q
g
(4.5V)
4.3
5.5
nC
Q
gs
1.6
nC
Q
gd
2.2
nC
t
D(on)
5.1
ns
t
r
2.6
ns
t
D(off)
15.9
ns
t
f
2
ns
t
rr
25.1
35
ns
Q
rr
28.7
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Body Diode Reverse Recovery Charge
Total Gate Charge
I
F
=4.7A, dI/dt=100A/
s
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=4.7A, dI/dt=100A/
s
Input Capacitance
N Channel Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=48V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
= 20V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=10V, V
DS
=5V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
m
V
GS
=4.5V, I
D
=4A
V
DS
=5V, I
D
=4.7A
I
S
=1A,V
GS
=0V
V
GS
=10V, I
D
=4.7A
Diode Forward Voltage
V
GS
=10V, V
DS
=30V, R
L
=6
,
R
GEN
=3
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=4.7A
V
GS
=0V, V
DS
=30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AOP804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=3.5V
4.0V
10.0V
5.0V
4.5V
0
5
10
15
2
2.5
3
3.5
4
4.5
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
20
30
40
50
60
70
80
90
100
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
1.8
2
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
ed
On
-R
esistan
ce
V
GS
=10V
V
GS
=4.5V
I
D
=3.0A
I
D
=4.7A
40
60
80
100
120
140
160
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=4.7A
25C
125C
Alpha & Omega Semiconductor, Ltd.
AOP804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts)
0
200
400
600
800
0
10
20
30
40
50
60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
T
J(Max)
=150C
T
A
=25C
R
DS(ON)
limited
V
DS
=30V
I
D
= 4.7A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=50C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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