APEX MICROTECHNOLOGY CORPORATION 5980 NORTH SHANNON ROAD TUCSON, ARIZONA 85741 USA APPLICATIONS HOTLINE: 1 (800) 546-2739
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
HIGH VOLTAGE SUPPLY, HV
5
500V
OUTPUT CURRENT, peak
1
28A
OUTPUT CURRENT, continuous 20A
DRIVER SUPPLY VOLTAGE, Vcc 20V
LOGIC SUPPLY VOLTAGE, Vdd 20V
LOGIC INPUT VOLTAGE -0.3V to V
dd
+ 0.3V
POWER DISSIPATION, internal
2
179 Watts
THERMAL RESISTANCE TO CASE
3
2.1C/Watt
TEMPERATURE, pin solder, 10s 300C
TEMPERATURE, junction
4
150C
TEMPERATURE RANGE, storage 65 to +150C
OPERATING TEMPERATURE, case 25 to +85C
EB01
SPECIFICATIONS
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
POSITIVE OUTPUT VOLTAGE I
OUT
=20A; V
cc
=10.8V, V
dd
=5V; 497.3 502.7 Volts
HV=500V, Fpwm=30kHz, L=100 H
NEGATIVE OUTPUT VOLTAGE " -2.7 2.7 Volts
POSITIVE EDGE DELAY " 1000 n-second
RISETIME " 500 n-second
NEGATIVE EDGE DELAY " 1000 n-second
FALLTIME " 500 n-second
PWM FREQUENCY Set by external circuitry 30 kHz
INPUT IMPEDANCE Set by internal resistors 50 k-ohm
INPUT
A logic level input independently controls each IGBT in
the half bridge. A logic level high turns on the IGBT; a logic
level low turns it off. A common shutdown input turns off
all IGBTs when high.
All inputs are Schmitt triggers with the upper threshold at
2/3V
dd
and the lower threshold at 1/3 V
dd
. This comfortably
interfaces with CMOS or HCMOS provided that the V
dd
for the
logic family and the EB01 are the same.
TTL families may be used if a pull-up to the logic supply
is added to the TTL gates driving the EBO1, and V
dd
for
the EB01 is the same supply as the logic supply for the
TTL family.
An open signal connector pulls the shut down input high and
all other inputs low, insuring that all outputs are off.
However, input impedance is 50k on all inputs; therefore, if
one input is open circuited a high radiated noise level could
supuriousy turn on an IGBT.
OUTPUT
Each output section consists of a switching mode IGBT
half bridge. Separate HV supply, emitter, and HV return lines
are provided for each section.
The IGBTs are conservatively rated to carry 20A. At 20A
the saturation voltage is 2.7V maximum.
Each IGBT has a high-speed diode connected in anti-
parallel. When switching an inductive load this diode will
conduct, and the drop at 20A will be 2.7V maximum.
INPUT AND OUTPUT SIGNALS
NOTES: 1. Guaranteed but not tested.
2. Total package power dissipation at 25C case tempterature with three outputs active.
3. Each IGBT.
4. Long term operation at the maximum junction temperature will result in reduced product life. Lower internal temperature by
reducing internal dissipation or using better heatsinking to achieve high MTTF.
5. Derate the High Voltage Supply V
s
by -0.133% per C below 25C.
PIN SYMBOL
FUNCTION
PIN
SYMBOL
FUNCTION
1 V
cc
3
Gate supply 3
13
HV1
High Voltage supply 1
2
Lin3
Low drive logic in 3
14
OUT1
Section 1 output
3
Hin3
High drive logic in 3
15
E1
Section 1 emitter
4 V
dd
Logic supply
16
HVRTN1
Section 1 return
5 V
cc
2
Gate supply 2
17
HV2
High voltage supply 2
6
Lin2
Low drive logic in 2
18
OUT 2
Section 2 output
7 V
ss
Logic ground
19
E2
Section 2 emitter
8
Hin2
High drive logic in 2
20
HVRTN2
Section 2 return
9 V
cc
1
Gate supply 1
21
HV3
High voltage supply 3
10
Lin1
Low drive logic in 1
22
OUT 3
Section 3 output
11
SD
Shut down logic in
23
E3
Section 3 emitter
12
Hin1
High drive logic in 1
24
HVRTN 3
Section 3 return
APEX MICROTECHNOLOGY CORPORATION 5980 NORTH SHANNON ROAD TUCSON, ARIZONA 85741 USA APPLICATIONS HOTLINE: 1 (800) 546-2739
This data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. All specifi ciations are subject to change without notice.
EBO1U REV. B JANUARY 2001 2001 Apex Microtechnology Corporation
EB01
OPERATING
CONSIDERATIONS
POWER SUPPLY REQUIREMENTS
SUPPLY VOLTAGE MAX CURRENT
HV1 50V to 500V 20A, continuous, 28A peak
HV2 50V to 500V 20A, continuous, 28A peak
HV3 50V to 500V 20A, continuous, 28A peak
V
cc
1 10V to 20V 10mA
V
cc
2 10V to 20V 10mA
V
cc
3 10V to 20V 10mA
V
dd
4.5 to 20V 10mA
HV1, HV2, and HV3 may be used independently, or may
be one supply. Also V
cc
1, V
cc
2, and V
cc
3 may be used
independently or tied together. The V
dd
supply must be
compatible with the input logic. If a high voltage logic such as
CMOS is used it may be tied with the V
cc
supplies. HCMOS
requires a 5V10% supply
SPECIAL CONSIDERATIONS
GENERAL
The EB01 is designed to give the user maximum fl exibility
in a digital or DSP based motion control system. Thermal,
overvoltage, overcurrent, and crossfi re protection circuits are
part of the user's design.
Users should read Application Note 1, "General Operating
Considerations;" and Application Note 30, "PWM Basics"
for much useful information in applying this part. These
Application Notes are in the "Power Integrated Circuits Data
Book" and on line at www.apexmicrotech.com.
GROUNDING AND BYPASSING
As in any high power PWM system, grounding and
bypassing are one of the keys to success. The EB01 is
capable of generating 20 kW pulses with 100 n-second rise
and fall times. If improperly grounded or bypassed this can
cause horrible conducted and radiated EMI.
In order to reduce conducted EMI, the EB01 provides a
separate power ground, named HVRTN, for each high voltage
supply. These grounds are electrically isolated from the logic
ground (V
ss
) and each other. This isolation eliminates high
current ground loops. However, more than 5V offset between
the grounds will destroy the EB01. Apex recommends
back to back high current diodes between logic and power
grounds; this will maintain isolation but keep offset at a
safe level. All grounds should tie together at one common
point in the system.
In order to reduce radiated EMI, Apex recommends a
400 F or larger capacitor between HV and HVRTN. This
capacitor should be a a switching power grade electrolytic
capacitor with ESR rated at 20 kHz. This capacitor should be
placed physically as close to the EB01 as possible.
However, such a capacitor will typically have a few
hundred milli-ohms or so ESR. Therefore, each section
must also be bypassed with a low ESR 1F or larger
ceramic capacitor.
In order to minimize radiated noise it is necessary to
minimize the area of the loop containing high frequency
current. (The size of the antenna.) Therefore the 1F ceramic
capacitors should bypass each HV to its return right at
the pins the EB01.
SHOOT THROUGH PROTECTION
IGBTs have a relatively short turn on delay, and a long
turn off delay. Unlike most semiconductor devices the turn off
delay cannot be improved very much by drive circuit design.
Therefore, if the turn on input to an IGBT in a half bridge
circuit is applied simultaneously with the turn off input to
the other IGBT in that half bridge, there will be a time when
both IGBTs are simultaneously on. This will short the power
rails through the IGBTs, causing excessive power dissipation
and very high EMI.
To avoid the shoot through condition the turn on of one
IGBT must be delayed long enough for the other in the same
half bridge to have completely turned off.
A delay of at least 1.5 -seconds is required for the EB01.
This delay must be provided after turning off Lin before Hin
of the same half bridge may be turned on; likewise it must
be provided after turning off Hin before Lin of the same half
bridge may be turned on.
PROTECTION CIRCUITS
The EB01 does not include protection circuits.
However, there is a shut down input which will turn off all
IGBTs when at logic "1". This input may be used with user
designed temperature sensing and current sensing circuits
to shut down the IGBTs in the event of a detected unsafe
condition. This is recommended since the IGBTs may be
turned off this way even if the normal input logic or DSP
programming is faulty.
START-UP REQUIREMENTS
In order for an IGBT to be turned on, the corresponding
logic input signal must make its positive transition after SD
has been low for at least 1 -second.
The lower rail IGBT in the half bridge must be turned on
for at least 2 -seconds to charge the bootstrap capacitor
before the top rail IGBT can be turned on. This must be done
no more than 330 -seconds prior to turning on the top rail
IGBT. However, if the load pulls the output to ground, the
positive rail IGBT can be turned on without fi rst briefl y turning
on the negative rail IGBT.
An internal fl oating supply is used to enhance the operation
of the bootstrap bias circuit. This allows the top rail IGBTs to
be held on indefi nitely once turned on.
HEATSINK
The EB01 should be provided with suffi cient heatsink to
dissipate 179 watts while holding a case temperature of
25C when operating at 500V, 20A, 30kHz and 3 sections
simultaneously providing maximum current.
The dissipation is composed of conduction losses (I
out
xV
sat
)
up to 54 watts per half bridge and switching losses of about 4
watts per half bridge. The conduction losses are proportional
to I
out
; switching losses are proportional to HV supply voltage
and to switching frequency.
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