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Электронный компонент: 1N5709B

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
V
BR
I
R
= 10
A
65 V
I
R
V
R
= 60 V
T
A
= 150 C
20
20
nA
A
C
T
V
R
= 4.0 V f = 1.0 MHz
77.9
86.1
pF
C
T4
/C
T60
V
R
= 4.0 V/V
R
= 60 V f = 1.0 MHz
3.2
3.4
--
Q
V
R
= 4.0 V f = 50 MHz
150
--
ABRUPT VARACTOR DIODE
1N5709B
DESCRIPTION:
The
ASI 1N5709B
is an Abrupt Varactor
Diode, designed for general purpose
applications.
MAXIMUM RATINGS
I
R
20 nA
V
R
70 V
P
DISS
400 mW @ T
A
= 25 C
T
J
-65 C to +175 C
T
STG
-65 C to +200 C



JC
250 C/W
PACKAGE STYLE DO-7