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Электронный компонент: 5082-3080

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
V
R
I
R
= 10
A
100 V
V
F
I
F
= 100 mA
1.0
V



I
F
= 50 mA
I
R
= 250 mA
1300



S
R
S
I
F
= 100 mA f = 100 MHz
2.5
C
t
V
R
= 50 V
f = 1.0 MHz
0.4
pF
R
H
I
F
= 10 A
f =100 MHz
1000
R
L
I
F
= 20 mA
f = 100 MHz
8.0
SILICON PIN DIODE
5082-3080
DESCRIPTION:
The
ASI 5082-3080
PIN Diode is
Designed for Low Power RF Switching
and Attenuating Applications.
MAXIMUM RATINGS
I
250 mA
V
100 V
P
DISS
250 mW @ T
C
= 25 C
T
J
-65 C to +150 C
T
STG
-65 C to +150 C
T
SOLD
260 C for 5 sec.
PACKAGE STYLE 15