A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL
MAXIM
UNITS
V
b
I
r
= 100
A
0.5
1.5
V
t
SS
F = 10 GHz
R
L
= 27 K
BIAS = NONE
B.W. = 375 KHz
LOW FREQUENCY CUTOFF
= 100 Hz
-59
dBM
V
o
f = 10 GHz P
in
= -40 dBM
BIAS = NONE
5000
8000
V/
W
R
V
800
6000
Ohms
Tsold
t = 5.0 SEC.
+230
O
C
SILICON SCHOTTKY BARRIER DETECTOR DIODE
A2S263
DESCRIPTION:
The
ASI A2S263
is a Silicon P-Type
Schottcky Barrier Zero Bias Detector
Diode Housed in a Hermetically
Sealed Glass Package.
MAXIMUM RATINGS
I
C
20 mA
V
CE
2.5 V
P
DISS
100 mW @ T
C
= 25
O
C
T
J
-60
O
C to +125
O
C
T
STG
-60
O
C to +125
O
C
PACKAGE STYLE 01
CATHODE INDICATED BY COLOR BAND
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