A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 50 mA
65 V
BV
CES
I
C
= 100 mA
65
V
BV
EBO
I
E
= 10 mA
3.5
V
I
CES
V
CE
= 40 V
25
mA
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
15
150
---
P
G
C
P
OUT
V
CC
= 40 V P
IN
= 30 W f = 1.215 to 1.4 GHz
7.3
45
160
7.8
50
180
dB
%
W
NPN SILICON RF POWER TRANSISTOR
ALR175
DESCRIPTION:
The
ASI ALR175
is common Base
transistor Designed for
1215 1400 MHz, L-Band Applications.
FEATURES:
Internal Input/Output Matching Network
P
G
= 7.3 dB at 30 W/1400 MHz
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
14 A
V
CC
45 V
P
DISS
330 W @ T
C
= 25 C
T
J
-65 C to +250 C
T
STG
-65 C to +200 C
JC
0.45 C/W
PACKAGE STYLE .400 2L FLG (A)
M IN IM UM
inches / mm
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
M AXIM UM
.120 / 3.05
.130 / 3.30
.396 / 10.06
inches / mm
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M
.118 / 3.00
.131 / 3.33
.135 / 3.43
.145 / 3.68
.072 / 1.83
.052 / 1.32
P
.230 / 5.84
G
C
N
2xR
4x .062 x 45
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45
A
.100 / 2.54
.395 / 10.03
.407 / 10.34
.890 / 22.61
.910 / 23.11
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