A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 5.0 mA
30
V
BV
CER
I
C
= 5.0 mA R
BE
= 10
55
V
BV
CBO
I
C
= 0.1 mA
55
V
BV
EBO
I
E
= 0.1 mA
3.5
V
I
CEX
V
C
= 55 V V
BE
= -1.5 V
100
A
I
CEO
V
E
= 28 V
20
A
V
CE
(S)
I
C
= 100 mA I
B
= 20 mA
1.0
V
h
FE
V
CE
= 5.0 V I
C
= 50 mA
I
C
= 360 mA
10
5.0
200
---
C
OB
V
CB
= 28 V f = 1.0 MHz
3.0
pF
P
G
V
CE
= 28 V P
OUT
= 1.0 W f = 175 MHz
13
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VHB1-28T
DESCRIPTION:
The
ASI VHB1-28T
is Designed for
FEATURES:
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
0.4 A
V
CBO
55 V
V
CEO
30 V
V
EBO
3.5 V
P
DISS
5 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
JC
35
O
C/W
PACKAGE STYLE TO-39
ORDER CODE: ASI10720
A
D
45
C
B
F
E
G
H
MINIMUM
inches / mm
.029 / 0.740
.335 / 8.510
.200 / 5.080
.028 / 0.720
.305 / 7.750
.240 / 6.100
B
C
D
E
F
G
A
MAXIMUM
.034 / 0.860
.335 / 8.500
.260 / 6.600
.370 / 9.370
inches / mm
.045 / 1.140
.500 / 12.700
H
.016 / 0.407
.020 / 0.508
DIM
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