A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 100 mA
48
55
---
V
BV
CER
I
C
= 40 mA R
BE
= 150
30
40
---
V
BV
CEO
I
C
= 40 mA
25
28
---
BV
EBO
I
E
= 10 mA
3.5
5.0
---
V
I
CBO
V
CE
= 24 V
10
---
---
mA
h
FE
V
CE
= 20 V I
C
= 2.0 A
15
40
100
---
C
OB
V
CB
= 25 V f = 1.0 MHz
50
pF
P
G
IMD
3
V
CE
= 25 V I
CQ
= 150 mA f = 860 MHz
P
OUT
= 30 W f
1
= 860.0 MHz f
2
= 860.1 MHz
7.5
-35
---
dB
dBc
VSWR
1
V
CE
= 25 V VSWR = 20:1
V
CE
= 25 V
20% VSWR = 10:1
No Degradation in
Output Device
Typ.
VSWR
2
V
CE
= 25 V
20% VSWR = 5:1
P
IN
= P
IN
(norm) +3 dB
No Degradation in
Output Device
Typ.
OVD
V
CE
= 25 V P
IN
(norm) = +5 Db
V
CE
= 25 V
20% P
IN
(norm) = +3 dB
No Degradation in
Output Device
Typ.
NPN SILICON RF POWER TRANSISTOR
CBSL30
DESCRIPTION:
The
ASI CBSL30
is Designed for
FEATURES:
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
7.5 A
V
CBO
48V
V
CEO
25 V
V
EBO
3.5 V
P
DISS
88 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
3.0
O
C/W
PACKAGE STYLE .230 6L FLG
ORDER CODE: ASI10582
MINIMUM
inches / mm
.115 / 2.92
.225 / 5.72
.075 / 1.91
.090 / 2.29
.720 / 18.29
B
C
D
E
F
G
A
MAXIMUM
.085 / 2.16
.110 / 2.79
.730 / 18.54
.235 / 5.97
inches / mm
.125 / 3.18
H
.355 / 9.02
DIM
K
L
I
J
.004 / 0.10
.120 / 3.05
.230 / 5.84
.006 / 0.15
.130 / 3.30
.260 / 6.60
K
4X .025 R
.040x45
.115
I
.125
E
.430 D
H
G
F
J
C
A
B
2X.130
L
.160 / 4.06
.180 / 4.57
.980 / 24.89
.970 / 24.64
.355 / 9.02
.365 / 9.27
.365 / 9.27
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