A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 100 mA
60
V
BV
CEO
I
C
= 100 mA
30
V
BV
EBO
I
E
= 50 mA
3.0
V
I
CES
V
CE
= 28 V
10
mA
h
FE
V
CE
= 5.0 V I
C
= 3.0 A
15
70
---
P
G
IMD
C
V
CE
= 24 V I
CQ
= 2 X 100 mA f = 960 MHz
P
OUT
= 100 W
9.0
45
-32
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
CBSL100
DESCRIPTION:
The
ASI CBSL100
is Designed for
FEATURES:
Input Matching Network
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
25 A
V
CBO
60 V
V
CEO
30 V
V
EBO
3.0 V
P
DISS
310 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
0.6
O
C/W
PACKAGE STYLE .400 BAL FLG (C)
ORDER CODE: ASI10585
MINIMUM
inches / mm
.380 / 9.65
.120 / 3.05
.780 / 19.81
B
C
D
E
F
G
A
MAXIMUM
.130 / 3.30
.820 / 20.83
.390 / 9.91
inches / mm
1.090 / 27.69
H
DIM
K
L
I
J
.003 / 0.08
.060 / 1.52
.007 / 0.18
.070 / 1.78
.205 / 5.21
N
M
.850 / 21.59
.870 / 22.10
.220 / 5.59
.230 / 5.84
.435 / 11.05
.082 / 2.08
.100 / 2.54
.407 / 10.34
.395 / 10.03
.080x45
A
B
F
G
H
I
J
K
L
M
(4X).060 R
.1925
D
C
E
FULL R
N
1.335 / 33.91
1.345 / 34.16
.210 / 5.33
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