A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 100 mA
110
V
BV
CES
I
C
= 100 mA
110
V
BV
CEO
I
C
= 100 mA
55
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CEO
V
CE
= 30 V
5
mA
I
CES
V
E
= 60 V
5
mA
h
FE
V
CE
= 6 V I
C
= 1.4 A
18
43.5
---
C
ob
V
CB
= 50 V
f = 1.0 MHz
220
pF
G
P
IMD
3
C
V
CE
= 50 V I
CQ
=100 mA P
OUT
= 150 W
(PEP)
14
37
-30
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
HF150-50S
DESCRIPTION:
The
ASI HF150-50S
is Designed for
FEATURES:
P
G
= 14 dB min. at 150 W/30 MHz
IMD
3
= 100 dBc max. at 150 W
(PEP)
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
10 A
V
CBO
110 V
V
EBO
4.0 V
V
CEO
55 V
P
DISS
233 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
0.75
O
C/W
PACKAGE STYLE .500 4L STUD (A)
ORDER CODE: ASI10613
MINIMUM
inches / mm
.495 / 12.57
.545 / 13.84
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
.555 / 14.10
.007 / 0.18
.830 / 21.08
.505 / 12.83
inches / mm
1.050 / 26.67
H
.497 / 12.62
.530 / 13.46
DIM
.220 / 5.59
.230 / 5.84
.198 / 5.03
.185 / 4.70
F
G
H
E
E
E
B
C
.112 x 45
1/4-28 UNF-2A
D
.630 NOM
A
C
B
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