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Электронный компонент: ASIBAM120

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CES
I
C
= 20 mA
60
V
BV
CEO
I
C
= 50 mA
32
V
BV
EBO
I
E
= 5.0 mA
4.0
V
h
FE
V
CE
= 25 V I
C
= 3.5 A
15
100
---
C
OB
V
CE
= 27 V
f = 1.0 MHz
240
pF
P
G



C
V
CC
= 27 V
P
OUT
= 120 W f = 150 MHz
9.0
65
dB
%
NPN SILICON RF POWER TRANSISTOR
BAM120
PACKAGE STYLE .500 4L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10430
DESCRIPTION:
The
ASI BAM120
is Designed to
operate in a collector modulated
VHF
Power Amplifier Applications up to 150
MHz
.
FEATURES:
C
= 65 % typ. @ 120 W/150 MHz
P
G
= 9.0 dB typ. @ 120 W/150 MHz
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
12 A
V
CES
60 V
V
EBO
4.0 V
P
DISS
140 W @ T
C
= 25
C
T
J
-65 C to +200 C
T
STG
-65 C to +150 C



JC
1.2 C/W