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Электронный компонент: ASIBLX15

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CEO
I
C
= 100 mA
55
V
BV
CBO
I
C
= 100 mA
110
V
BV
EBO
I
E
= 10 mA
4.0
V
h
FE
V
CE
= 6.0 V I
C
= 1.4 A
15
50
---
P
g
IMD
3



C
V
CE
= 50 V
I
cq
= 100 mA
P
out
= 150 W
(PEP)
f = 30 MHz
14
---
37
---
-37
45
---
-30
---
dB
dBc
%
C
ob
V
CB
= 50 V
f = 1.0 MHz
220
pF
NPN SILICON RF POWER TRANSISTOR
ASI BLX15
DESCRIPTION:
The
ASI BLX15
is a Common Emitter
Device Designed for High Linearity
Class A/AB HF Applications.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
MAXIMUM RATINGS
I
C
10 A
V
CB
110 V
P
DISS
233 W @ T
C
= 25
O
C
T
J
-55
O
C to +200
O
C
T
STG
-55
O
C to +200
O
C



JC
0.75
O
C/W
PACKAGE STYLE .550 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE