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Электронный компонент: ASIBLX65S

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
A
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BV
CEO
I
C
= 50 mA
16
V
BV
CES
I
C
= 50 mA
36
V
BV
EBO
I
E
= 1.0 mA
2.5
V
I
CBO
V
CB
= 15 V
1.0
mA
h
FE
V
CB
= 5.0 V I
C
= 50 mA
20
200
---
C
OB
V
CB
= 12.5 V f = 1.0 MHz
15
pF
G
PE



C
V
CE
= 12.5 V P
OUT
= 2.0 W f = 470 MHz
7.0
55
dB
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
ASI BLX65S
DESCRIPTION
The
ASI BLX65S
is Designed for
12.5 V Class C Amplifier Applications
in the 100 to 500 MHz Frequency
Range.
FEATURES INCLUDE:
Economical TO-39 Package
8 dB Typical Gain
Emitter Ballasting
MAXIMUM RATINGS
I
C
750 mA
V
CBO
36 V
P
DISS
5.0 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C



JC
35
O
C / W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR (CASE)