A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 80 mA
42
V
BV
EBO
I
E
= 1.0 mA
3.5
V
I
CBO
V
CB
= 22 V
2.0
mA
h
FE
V
CE
= 5.0 V I
C
= 400 mA
10
100
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
12
pF
G
PB
c
V
CE
= 22 V
P
out
= 9.0 W
f = 1.7 GHz & 2.0 GHz
6.5
40
dB
%
NPN SILICON RF POWER TRANSISTOR
MRAL1720-9
DESCRIPTION:
The
ASI MRAL1720-9
is Designed
for Class C, Common Base Wideband
Large Signal Amplifier Applications up
to 2.0 GHz.
FEATURES:
Diffused Ballast Resistors.
Internal Matching Network
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
4.0 A
(CONT)
V
CES
42 V
V
EBO
3.5 V
T
J
-65 C to +200 C
T
STG
-65 C to +150 C
JC
4.5 C/W
PACKAGE STYLE 400 4L FLG
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