A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
V
B
I
R
= 10
A
80
V
C
T
V
R
= 6.0 V f = 1.0 MHz
10.8
13.2
pF
R
S
V
R
= 6.0 V f = 50 MHz
0.25
Ohms
F
OUT
1000
MHz
P
OUT
25.1
W
F
IN
500
MHz
P
IN
37.0
W
SILICON VARACTOR DIODE
MV1807J1
DESCRIPTION:
The
ASI MV1807J1
is a Diffused
Epitaxial Varactor Diode Designed for
Multiplier Applications.
MAXIMUM RATINGS
I
100 mA
V
80 V
P
DISS
21 W @ T
C
= 25
O
C
T
J
-65
O
C to +150
O
C
T
STG
-65
O
C to +175
O
C
JC
6.0
O
C/W
PACKAGE STYLE DO-4
Cathode to case
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