A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
NONE
SYMBOL TEST
CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BV
CEO
I
C
= 5.0 mA
30
V
BV
CBO
I
C
= 100
A 50
V
BV
EBO
I
E
= 100
A 5.0
V
I
CEO
V
CE
= 28 V
100
A
h
FE
V
CE
= 15 V I
C
= 50 mA
30
300
---
f
t
V
CE
= 15 V I
C
= 50 mA
1500
1800
MHz
C
ob
V
CB
= 30 V
f = 100 KHz
2.5
3.5
pF
C
ib
V
EB
= 0.5 V
f = 100 KHz
8.0
10
pF
NF
NB
V
CE
= 10 V
I
C
= 10 mA f = 2000 MHz
2.7
dB
NF
BB
V
CE
= 15 V
I
C
= 50 mA f = 216 MHz
7.0
8.0
dB
G
VE
V
CE
= 15 V I
C
= 50 mA f = 216 MHz
7.2
6.8
dB
X
MOD
V
CE
= 15 V I
C
= 50 mA P
out
= +45 dbmV
-60
-57
dB
2
NDO
V
CE
= 15 V I
C
= 50 mA P
out
= +45 dbmV
-60
-50
dB
NPN SILICON HIGH FREQUENCY TRANSISTOR
SD1006
DESCRIPTION:
The
ASI SD1006
is a High Frequency
Transistor for General Purpose
Amplifier Applications
.
MAXIMUM RATINGS
I
C
400 mA
V
CEO
30 V
V
CBO
50 V
P
DISS
3.5 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +200 C
JC
50 C/W
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
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