A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BV
CEO
I
C
= 10 mA
10
V
BV
CER
I
C
= 10 mA R
BE
= 100
19 V
BV
CBO
I
C
= 5.0 mA
20
V
BV
EBO
I
C
= 1.0 mA
3.0
V
I
CES
V
CE
= 10 V
100
A
H
FE
V
CE
= 5.0 V I
C
= 100 mA
I
C
= 300 mA
40
50
---
f
t
V
CE
= 5.0 V I
C
= 300 mA f = 100 MHz
1.0
2.0
GHz
C
cb
V
CB
= 5.0 V
f = 1.0 MHz
4.2
Pf
C
C
V
CB
= 5.0 V f = 1.0 MHz
5.8
Pf
NPN SILICON HIGH FREQUENCY TRANSISTOR
BFT51F
DESCRIPTION:
The
ASI
BFT51
is Designed for
High Frequency Amplifier Applications.
MAXIMUM RATINGS
I
C
500 mA
V
CE
20 V
P
DISS
3.0 W @ T
C
= 25 C
T
J
-65 C to +175 C
T
STG
-65 C to +175 C
JC
20 K/W
PACKAGE STYLE TO- 126
PDF 
ZIP