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Электронный компонент: BLW75

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CER
I
C
= 50 mA
R
BE
= 10
60
V
BV
CBO
I
C
= 50 mA
60
V
BV
CEO
I
C
= 50 mA
30
V
BV
EBO
I
E
= 10 mA
4.0
V
h
FE
V
CE
= 25 V I
C
= 2.0 A
20
45
---
C
ob
V
CB
= 30 V
f = 1.0 MHz
90
120
pF
C
re
V
CE
= 30 V
I
C
= 200 mA f = 1.0 MHz
55
pF
f
T
V
CE
= 25 V
I
C
= 6.0 A f = 100 MHz
800
MHz
NPN SILICON RF POWER TRANSISTOR
BLW75
DESCRIPTION:
The
ASI BLW75
is Designed for
25V Large-Signal Amplifier
Applications, TV Transposers, and
Transmitters Operating in Band lll.
MAXIMUM RATINGS
I
C
4.0 A
V
CE
32 V
V
CB
60 V
P
DISS
60 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +125
O
C



JC
1.9
O
C/W
PACKAGE STYLE .380" 4L STUD (MOD STUD)
1
= COLLECTOR 2 & 4 = EMITTER
3 = BASE