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Электронный компонент: BM30-12

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CES
I
C
= 20 mA
36
V
BV
CEO
I
C
= 50 mA
18
BV
EBO
I
E
= 5.0 mA
4.0
V
C
ob
V
CB
= 12.5 V f = 1.0 MHz
110
pF
P
OUT
P
IN
C
V
CC
= 12.5 V P
OUT
= 40 W f = 175 MHz
30
4.5
60
W
W
%
Z
IN
Z
L
P
OUT
= 30 W f = 175 MHz
1.0 + j1.4
1.75 + j0.5

NPN SILICON RF POWER TRANSISTOR
BM30-12
DESCRIPTION:
The
ASI BM30-12
is Designed for
VHF land mobil applications in the 150-
175 MHZ range.
FEATURES:
Common Emitter
P
OUT
= 30 W at175 MHz
OmnigoldTM Metalization System
Internal Matching network
MAXIMUM RATINGS
I
C
8.0 A
V
CES
36 V
V
CEO
18 V
V
EBO
4.0 V
P
DISS
65 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +200 C
JC
2.7 C/W
PACKAGE STYLE .500 6L FLG















M INIM UM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
M AXIMUM
.220 / 5.59
.007 / 0.18
.510 / 12.95
inches / mm
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.32
N
M
.120 / 3.05
.135 / 3.43
.150 / 3.43
.160 / 4.06
.125 / 3.18
.090 / 2.29
.105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x N
FULL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.33
.200 / 5.08
C
B
E
E